IPB025N10N3 G

Mfr. #:: IPB025N10N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB025N10N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB025N10N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 206 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Type:: OptiMOS 3 Power-Transistor

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 100 S

Fall Time:: 28 ns

Product Type:: MOSFET

Rise Time:: 58 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 84 ns

Typical Turn-On Delay Time:: 34 ns

Part # Aliases:: IPB025N10N3GATMA1 IPB25N1N3GXT SP000469888

Unit Weight:: 0.056438 oz

Tags: IPB025N1, IPB025, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB025N10N3 G More Information

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB025N10N3GATMA1 DISTI # IPB025N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	2000:$3.3971 1000:$3.5759
IPB025N10N3GE8187ATMA1 DISTI # IPB025N10N3GE8187ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call	1000:$3.1162
IPB025N10N3GATMA1 DISTI # IPB025N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$4.0778 100:$4.6829 10:$5.6560 1:$6.2600
IPB025N10N3GATMA1 DISTI # IPB025N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$4.0778 100:$4.6829 10:$5.6560 1:$6.2600
IPB025N10N3GATMA1 DISTI # V72:2272_06378745	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0
IPB025N10N3GATMA1 DISTI # V36:1790_06378745	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$3.4000 500000:$3.4030 100000:$3.6630 10000:$4.1130 1000:$4.1880
IPB025N10N3G DISTI # IPB025N10N3 G	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0
IPB025N10N3GATMA1 DISTI # IPB025N10N3GATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPB025N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.9900 6000:$3.0900 4000:$3.1900 2000:$3.2900 1000:$3.4900
IPB025N10N3GATMA1 DISTI # 47W3462	Infineon Technologies AG	MV POWER MOS - Bulk (Alt: 47W3462) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IPB025N10N3GATMA1 DISTI # SP000469888	Infineon Technologies AG	MV POWER MOS (Alt: SP000469888) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€2.5900 6000:€2.7900 4000:€2.9900 2000:€3.0900 1000:€3.2900
IPB025N10N3GE8197ATMA1 DISTI # IPB025N10N3GE8197ATMA1	Infineon Technologies AG	- Bulk (Alt: IPB025N10N3GE8197ATMA1) Min Qty: 151 Container: Bulk	Americas - 0
IPB025N10N3GE8187ATMA1 DISTI # IPB025N10N3GE8187ATMA1	Infineon Technologies AG	- Bulk (Alt: IPB025N10N3GE8187ATMA1) Min Qty: 151 Container: Bulk	Americas - 0
IPB025N10N3GATMA1. DISTI # 26AC0487	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:7Pins RoHS Compliant: Yes	0	10000:$2.9900 6000:$3.0900 4000:$3.1900 2000:$3.2900 1:$3.4900
IPB025N10N3 G DISTI # 726-IPB025N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1:$6.4300 10:$5.4700 100:$4.7400 250:$4.5000 500:$4.0300 1000:$3.4000 2000:$3.2300
IPB025N10N3GATMA1 DISTI # 726-IPB025N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	0	1:$6.4300 10:$5.4700 100:$4.7400 250:$4.5000 500:$4.0300 1000:$3.4000 2000:$3.2300
IPB025N10N3GE818XT DISTI # 726-IPB025N10N3GEMA1	Infineon Technologies AG	MOSFET N-Ch 100V 180A D2PAK-6 RoHS: Compliant	0
IPB025N10N3GATMA1 DISTI # 7545421	Infineon Technologies AG	MOSFET N-CHANNEL 100V 180A TO263-7, EA	66	500:£2.7500 250:£3.0700 50:£3.4100 10:£3.7300 1:£4.7000
IPB025N10N3GATMA1 DISTI # 7545421P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 180A TO263-7, RL	383	500:£2.7500 250:£3.0700 50:£3.4100 10:£3.7300
IPB025N10N3GATMA1 DISTI # 2212822	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO263-7 RoHS: Compliant	3050	2000:$4.8700 1000:$5.1200 500:$6.0700 250:$6.7800 100:$7.1400 10:$8.2400 1:$9.6900
IPB025N10N3GATMA1 DISTI # 2212822	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO263-7	0	500:£3.1400 250:£3.5000 100:£3.6900 10:£4.2600 1:£5.5200
IPB025N10N3 G DISTI # TMOSP9671	Infineon Technologies AG	N-CH 100V 180A3mOhm TO263-7 RoHS: Compliant	Stock DE - 2000Stock HK - 0Stock US - 0	1000:$4.4900

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Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of IPB025N10N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.43~~; ~~$6.43~~

10: ~~$5.47~~; ~~$54.70~~

100: ~~$4.74~~; ~~$474.00~~

250: ~~$4.50~~; ~~$1 125.00~~

500: ~~$4.03~~; ~~$2 015.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB025N10N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes