IRG4BC40UPBF

Mfr. #:: IRG4BC40UPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V UltraFast 8-60kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRG4BC40UPBF Datasheet
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More Information:: IRG4BC40UPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.1 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 40 A

Pd - Power Dissipation:: 160 W

Minimum Operating Temperature:: - 55 C

Packaging:: Tube

Height:: 8.77 mm

Length:: 10.54 mm

Width:: 4.69 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Part # Aliases:: SP001541308

Unit Weight:: 0.211644 oz

Tags: IRG4BC40U, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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IRG4BC40UPBF Description

*** Electronics: IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***itex: Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

***roFlash: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ure Electronics: IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

*** Stop Electro: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 49A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***eco: Transistor IGBT Chip Negative Channel 600 Volt 49A 3-Pin(3+Tab) TO-220AB

***ure Electronics: IRG4BC40FPbF Series 600 V 27 A N-Channel Fast Speed IGBT - TO-220AB

***ineon SCT: 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***trelec: IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 170 ns Power dissipation: 160 W

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:49A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:49A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:200A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***(Formerly Allied Electronics): Transistor; N-Channel IGBT; TO-220AB; 42 A (Max.); 600 V (Max.); 160 W (Max.)

***ineon SCT: 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS

***ow.cn: Trans IGBT Chip N-CH 600V 42A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:42A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:160W; Package/Case:TO-220AB ;RoHS Compliant: Yes

***nell: IGBT, 600V, 42A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:42A; Voltage, Vce Sat Max:2.1V; Power Dissipation:160W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:84A; No. of Pins:3; Power, Pd:160W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:210ns; Time, Fall Max:210ns; Time, Fall Typ:150ns; Time, Rise:18ns; Time, Short Circuit Withstand Min:10µs; Transistors, No. of:1

*** Source Electronics: Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB

***ure Electronics: HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB

***r Electronics: Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***rchild Semiconductor: The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

IRG4BC40UPBF More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRG4BC40UPBF DISTI # V36:1790_13892153	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube	3787	1:$2.7049
IRG4BC40UPBF DISTI # IRG4BC40UPBF-ND	Infineon Technologies AG	IGBT 600V 40A 160W TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	786In Stock	1000:$2.1023 500:$2.4927 100:$2.9281 10:$3.5740 1:$3.9800
IRG4BC40UPBF DISTI # 32019611	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube	3787	5000:$1.5699 2000:$1.6580 1000:$1.7970 500:$1.8960 250:$2.4970 100:$2.6180 10:$2.9760 4:$3.4360
IRG4BC40UPBF DISTI # 29558516	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube	997	4000:$1.6224 2000:$1.7184 1000:$1.8144
IRG4BC40UPBF DISTI # 30605970	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube	300	100:$2.3205 50:$2.4480 10:$2.9580 6:$4.3605
IRG4BC40UPBF DISTI # IRG4BC40UPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC40UPBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 4800	1000:$1.8900 2000:$1.7900 4000:$1.6900 6000:$1.6900 10000:$1.6900
IRG4BC40UPBF DISTI # 63J7495	Infineon Technologies AG	SINGLE IGBT, 600V, 40A,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:160W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	77	500:$2.3700 250:$2.6400 100:$2.7800 50:$2.9200 25:$3.0700 10:$3.2100 1:$3.7800
IRG4BC40UPBF. DISTI # 27AC6929	Infineon Technologies AG	INDUSTRY 59 ROHS COMPLIANT: YES	0	500:$2.3700 250:$2.6400 100:$2.7800 50:$2.9200 25:$3.1400 10:$3.2800 1:$3.8600
IRG4BC40UPBF DISTI # 70017484	Infineon Technologies AG	600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE RoHS: Compliant	0	300:$5.2000
IRG4BC40UPBF DISTI # 942-IRG4BC40UPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 8-60kHz RoHS: Compliant	923	1:$3.7800 10:$3.2100 100:$2.7800 250:$2.6400 500:$2.3700 1000:$2.0000 2000:$1.9000
IRG4BC40UPBF	International Rectifier	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	850	1000:$1.5800 500:$1.6600 100:$1.7300 25:$1.8100 1:$1.9400
IRG4BC40UPBF DISTI # 5430175P	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 40A TO220AB, TU	244	25:£1.4400
IRG4BC40UPBF DISTI # 5430175	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 40A TO220AB, EA	95	25:£1.4400 1:£1.4800
IRG4BC40UPBF	International Rectifier		145
IRG4BC40UPBF DISTI # IRG4BC40UPBF	Infineon Technologies AG	600V 40A 160W TO220AB RoHS: Compliant	620	10:€2.2000 50:€1.9000 100:€1.7500 200:€1.6000
IRG4BC40UPBF DISTI # C1S327400098353	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	191	100:$1.8200 50:$1.9700 10:$2.3300 1:$3.4200
IRG4BC40UPBF DISTI # C1S322000498134	Infineon Technologies AG	IGBT Chip RoHS: Compliant	300	100:$1.8500 50:$1.9500 10:$2.3600 1:$3.4900
IRG4BC40UPBF DISTI # XSKDRABS0023774	Infineon Technologies AG	RoHS: Compliant	800 in Stock0 on Order	800:$2.0700 225:$2.2200
IRG4BC40UPBF DISTI # XSKDRABV0021549	Infineon Technologies AG	RoHS: Compliant	300 in Stock0 on Order	300:$2.4700
IRG4BC40UPBF DISTI # 9104992	Infineon Technologies AG	IGBT, TO-220 RoHS: Compliant	636	500:£1.3200 250:£1.3300 100:£1.3400 10:£1.3700 1:£1.4700

Image	Part #	Description
	Mfr.#: AT24C08D-XHM-T OMO.#: OMO-AT24C08D-XHM-T	EEPROM 1.7-3.6V, 1MHz, Ind Tmp, 8-TSSOP
	Mfr.#: TYN640RG OMO.#: OMO-TYN640RG	SCRs 40 Amp 600 Volt
	Mfr.#: DFB2560 OMO.#: OMO-DFB2560	Bridge Rectifiers 600V 25A Glass Pass. Bridge Rectifier
	Mfr.#: STGP35HF60W OMO.#: OMO-STGP35HF60W	IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
	Mfr.#: 74VHCT541AFT(BE) OMO.#: OMO-74VHCT541AFT-BE-	Buffers & Line Drivers CMOS Logic IC Series
	Mfr.#: STP45N65M5 OMO.#: OMO-STP45N65M5	MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
	Mfr.#: 68691-210HLF OMO.#: OMO-68691-210HLF	Headers & Wire Housings 10P DR HEADER
	Mfr.#: TYN640RG OMO.#: OMO-TYN640RG-STMICROELECTRONICS	SCR 600V 40A TO-220AB
	Mfr.#: STGP35HF60W OMO.#: OMO-STGP35HF60W-STMICROELECTRONICS	IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
	Mfr.#: ESR10EZPF3301 OMO.#: OMO-ESR10EZPF3301-ROHM-SEMI	RES SMD 3.3K OHM 1% 0.4W 0805

IRG4BC40UPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes