IRF640NLPBF

Mfr. #:: IRF640NLPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF640NLPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF640NLPBF Datasheet IRF640NLPBF Datasheet (P4-P6)IRF640NLPBF Datasheet (P7-P9)IRF640NLPBF Datasheet (P10-P11)
ECAD Model:
More Information:: IRF640NLPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-262-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 18 A

Rds On - Drain-Source Resistance:: 150 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 44.7 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 150 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 9.45 mm

Length:: 10.2 mm

Transistor Type:: 1 N-Channel

Width:: 4.5 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 6.8 S

Fall Time:: 5.5 ns

Product Type:: MOSFET

Rise Time:: 19 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: SP001563296

Unit Weight:: 0.084199 oz

Tags: IRF640N, IRF640, IRF64, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF640NLPBF Ratings and Reviews

G***r

Great Deal Many Thanks.

2019-04-02

N***v

Delivery 42 days. No visible damage during delivery and soldering jambs. I haven't checked it yet. Thanks to the seller.

2019-01-23

D***v

No delivery. Money on the dispute returned.

2019-04-29

S***h

The seller is responsible, the packaging is normal, all whole. All good!!!

2019-06-03

IRF640NLPBF Description

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V

***ure Electronics: Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3

*** Source Electronics: MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

IRF640NLPBF More Information

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF640NLPBF DISTI # V99:2348_13890573	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	987	10000:$0.6538 5000:$0.6767 2500:$0.6988 1000:$0.7413 500:$0.8645 100:$0.9661 10:$1.1450 1:$1.2932
IRF640NLPBF DISTI # IRF640NLPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 18A TO-262 RoHS: Compliant Min Qty: 1 Container: Tube	2168In Stock	1000:$1.0174 500:$1.2056 100:$1.5191 10:$1.8640 1:$2.0500
IRF640NLPBF DISTI # 27158271	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	7506	1000:$0.8336 500:$1.0060 100:$1.1491 27:$1.4414
IRF640NLPBF DISTI # 26198161	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	987	500:$0.8645 100:$0.9661 10:$1.1450
IRF640NLPBF DISTI # IRF640NLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF640NLPBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.6569 2000:$0.6329 4000:$0.6099 6000:$0.5889 10000:$0.5789
IRF640NLPBF DISTI # SP001563296	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 (Alt: SP001563296) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.6069 10:€0.5399 25:€0.4859 50:€0.4409 100:€0.4049 500:€0.3729 1000:€0.3469
IRF640NLPBF DISTI # 63J7350	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 18A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):150mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes	1000	1:$1.6800 10:$1.4300 100:$1.1400 500:$0.9980 1000:$0.8270
IRF640NLPBF DISTI # 70017531	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,TO-262,PD 150W,VGS +/-20V RoHS: Compliant	0	650:$2.1500
IRF640NLPBF	International Rectifier	RoHS: Not Compliant	2350	1000:$0.8400 500:$0.8800 100:$0.9200 25:$0.9600 1:$1.0300
IRF640NLPBF DISTI # 942-IRF640NLPBF	Infineon Technologies AG	MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS: Compliant	731	1:$1.6800 10:$1.4300 100:$1.1400 500:$0.9980 1000:$0.8270
IRF640NLPBF DISTI # 8312859	Infineon Technologies AG	HEXFET N-CH MOSFET 18A 200V TO-262, PK	560	5:£1.3020 25:£1.0280 50:£0.9280 125:£0.8260 250:£0.8100
IRF640NLPBF DISTI # IRF640NLPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,18A,150W,TO262	352	1:$1.0200 3:$0.9600 10:$0.8100 100:$0.7300
IRF640NLPBF DISTI # 2576887	Infineon Technologies AG	MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant	1000	1:$2.6600 10:$2.2700 100:$1.8100 500:$1.5800 1000:$1.3200
IRF640NLPBF. DISTI # 9537511	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 18A, TO-262 RoHS: Compliant	64	1:$1.0300
IRF640NLPBF DISTI # 2576887	Infineon Technologies AG	MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant	1025	5:£1.2000 25:£0.8260 100:£0.8220 250:£0.8180 500:£0.7630
IRF640NLPBF DISTI # C1S322000481453	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	987	500:$0.8645 100:$0.9661 10:$1.1450

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IRF640NLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.67~~; ~~$1.67~~

10: ~~$1.42~~; ~~$14.20~~

100: ~~$1.14~~; ~~$114.00~~

500: ~~$1.00~~; ~~$499.00~~

1000: ~~$0.83~~; ~~$827.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

IRF640N 33
IRF640 72
IRF64 115
IRF6 688
IRF 8615

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