APT31M100L

APT31M100L
Mfr. #:
APT31M100L
Manufacturer:
Microchip / Microsemi
Description:
MOSFET FG, MOSFET, 1000V, TO-264
Lifecycle:
New from this manufacturer.
Datasheet:
APT31M100L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT31M100L DatasheetAPT31M100L Datasheet (P4)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Microchip
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-264-3
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
32 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
260 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.04 kW
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Brand:
Microchip / Microsemi
Forward Transconductance - Min:
34 S
Fall Time:
33 ns
Product Type:
MOSFET
Rise Time:
35 ns
Factory Pack Quantity:
1
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
130 ns
Typical Turn-On Delay Time:
39 ns
Unit Weight:
0.352740 oz
Tags
APT31, APT3, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rochip
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*** Stop Electro
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***emi
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***r Electronics
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***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
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***ser
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*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Part # Mfg. Description Stock Price
APT31M100L
DISTI # APT31M100L
Microchip Technology IncPower MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 0
  • 300:$10.6900
  • 150:$10.8900
  • 90:$11.1900
  • 60:$11.5900
  • 30:$11.9900
APT31M100L
DISTI # 494-APT31M100L
Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant
12
  • 1:$18.6400
  • 10:$16.9400
  • 25:$15.6700
  • 50:$14.8200
  • 100:$14.3000
  • 250:$13.0500
  • 500:$11.7500
Image Part # Description
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L

MOSFET FG, MOSFET, 1000V, TO-264
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2

MOSFET FG, MOSFET, 1000V, TO-247 T-MAX
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2-MICROSEMI

Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT31M100B2)
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L-MICROSEMI

Power MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
APT31N60SCS

Mfr.#: APT31N60SCS

OMO.#: OMO-APT31N60SCS-1190

New and Original
APT31N90JC3

Mfr.#: APT31N90JC3

OMO.#: OMO-APT31N90JC3-1190

New and Original
Availability
Stock:
12
On Order:
1995
Enter Quantity:
Current price of APT31M100L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$18.64
$18.64
10
$16.94
$169.40
25
$15.67
$391.75
50
$14.82
$741.00
100
$14.30
$1 430.00
250
$13.05
$3 262.50
500
$11.75
$5 875.00
1000
$10.90
$10 900.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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