FQD2N60CTM_WS

Mfr. #:: FQD2N60CTM_WS
Manufacturer:: Fairchild Semiconductor
Description:: IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FQD2N60CTM_WS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: Transistors - FETs, MOSFETs - Single

Packaging: Reel

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Package-Case: TO-252-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Vgs-Gate-Source-Voltage: 30 V

Id-Continuous-Drain-Current: 1.9 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Rds-On-Drain-Source-Resistance: 4.7 Ohms

Transistor-Polarity: N-Channel

Tags: FQD2N60CTM, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQD2N60CTM_WS Description

***emi: N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***i-Key: MOSFET N-CH 600V 2.4A DPAK

***nsix Microsemi: Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ser: MOSFETs 600V N-Channel QFET

***el Nordic: Contact for details

***inecomponents.com: Trans MOSFET N-CH 600V 2A 3-Pin (2+Tab) TO-252 T/R

***i-Key: MOSFET N-CH 600V 2A DPAK

***ser: MOSFETs & MOSFETs RF .

*** Source Electronics: MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N CH, 650V, 1.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 2.97ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ineon SCT: Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS

***ark: Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ical: Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) TO-252 T/R

*** Stop Electro: Power Field-Effect Transistor, 2.4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 600V, 2.4A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***i-Key: MOSFET N-CH 500V 1.6A DPAK

***ser: MOSFETs 500V N-Channel QFET

***ark: MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.6A; On-Resistance, Rds(on):5.3ohm; Package/Case:2-TO-252; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No

Market price

Part #	Mfg.	Description	Stock	Price
FQD2N60CTM-WS DISTI # FQD2N60CTM-WSCT-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FQD2N60CTM-WS DISTI # FQD2N60CTM-WSDKR-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FQD2N60CTM-WS DISTI # FQD2N60CTM-WSTR-ND	ON Semiconductor	MOSFET N-CH 600V 1.9A RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4304
FQD2N60CTM_WS DISTI # FQD2N60CTM-WS	ON Semiconductor	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: FQD2N60CTM-WS) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3469 5000:$0.3449 10000:$0.3399 15000:$0.3359 25000:$0.3279
FQD2N60CTM_WS DISTI # FQD2N60CTM-WS	ON Semiconductor	MOS Power Transistors HV (>= 200V) (Alt: FQD2N60CTM-WS) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.6399 5000:€0.4979 10000:€0.4129 15000:€0.3479 25000:€0.3229
FQD2N60CTM-WS DISTI # 48AC1176	ON Semiconductor	QFC 600V 4.7OHM DPAK / REEL	0	1:$0.5590
FQD2N60CTM-WS DISTI # 512-FQD2N60CTM_WS	ON Semiconductor	MOSFET 600V 1.9A NCH MOSFET RoHS: Compliant	2747	1:$0.9200 10:$0.7830 100:$0.6010 500:$0.5320 1000:$0.4200 2500:$0.3720 10000:$0.3580
FQD2N60CTM_WS DISTI # XSKDRABV0044784	ON SEMICONDUCTOR	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.4573 2500:$0.4900

Image	Part #	Description
	Mfr.#: FQD2N60CTM-WS OMO.#: OMO-FQD2N60CTM-WS	MOSFET 600V 1.9A NCH MOSFET
	Mfr.#: FQD2N60CTM OMO.#: OMO-FQD2N60CTM	MOSFET N-CH/600V/2A/A.QFET
	Mfr.#: FQD2N60A OMO.#: OMO-FQD2N60A-1190	New and Original
	Mfr.#: FQD2N60C OMO.#: OMO-FQD2N60C-1190	New and Original
	Mfr.#: FQD2N60C FQD2N60 2N60D OMO.#: OMO-FQD2N60C-FQD2N60-2N60D-1190	New and Original
	Mfr.#: FQD2N60C TM-(FAIRCHILD) OMO.#: OMO-FQD2N60C-TM--FAIRCHILD--1190	New and Original
	Mfr.#: FQD2N60CTF_F080 OMO.#: OMO-FQD2N60CTF-F080-ON-SEMICONDUCTOR	MOSFET N-CH 600V 1.9A DPAK
	Mfr.#: FQD2N60CTM-NL OMO.#: OMO-FQD2N60CTM-NL-1190	New and Original
	Mfr.#: FQD2N60CTM/FQD5N60C OMO.#: OMO-FQD2N60CTM-FQD5N60C-1190	New and Original
	Mfr.#: FQD2N60TM OMO.#: OMO-FQD2N60TM-ON-SEMICONDUCTOR	MOSFET N-CH 600V 2A DPAK

FQD2N60CTM_WS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes