FQD2N60CT

FQD2N60CTM vs FQD2N60CTF vs FQD2N60CTF_F080

 
PartNumberFQD2N60CTMFQD2N60CTFFQD2N60CTF_F080
DescriptionMOSFET N-CH/600V/2A/A.QFETMOSFET 600V N-Channel Adv Q-FET C-SeriesMOSFET N-CH 600V 1.9A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current1.9 A1.9 A-
Rds On Drain Source Resistance3.6 Ohms4.7 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD2N60CFQD2N60C-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min5 S5 S-
Fall Time28 ns28 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesFQD2N60CTM_NLFQD2N60CTF_NL-
Unit Weight0.009171 oz0.009184 oz-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD2N60CTM-WS MOSFET 600V 1.9A NCH MOSFET
FQD2N60CTM MOSFET N-CH/600V/2A/A.QFET
FQD2N60CTF MOSFET 600V N-Channel Adv Q-FET C-Series
ON Semiconductor
ON Semiconductor
FQD2N60CTF MOSFET N-CH 600V 1.9A DPAK
FQD2N60CTF_F080 MOSFET N-CH 600V 1.9A DPAK
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FQD2N60CTM-WS 600V, 1.9A, NCH MOSFET
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