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FQD2N60CTF

FQD2N60CTF
Mfr. #:
FQD2N60CTF
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 600V N-Channel Adv Q-FET C-Series
Lifecycle:
New from this manufacturer.
Datasheet:
FQD2N60CTF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
1.9 A
Rds On - Drain-Source Resistance:
4.7 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.39 mm
Length:
6.73 mm
Series:
FQD2N60C
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
6.22 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
5 S
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
FQD2N60CTF_NL
Unit Weight:
0.009184 oz
Tags
FQD2N60CTF, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:1.9mA; On Resistance, Rds(on):3.6ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
FQD2N60CTF
DISTI # FQD2N60CTF-ND		ON SemiconductorMOSFET N-CH 600V 1.9A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    FQD2N60CTF_F080
    DISTI # FQD2N60CTF_F080-ND    		ON SemiconductorMOSFET N-CH 600V 1.9A DPAK
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      FQD2N60CTF
      DISTI # FQD2N60CTF      		ON SemiconductorTRANS MOSFET N-CH 600V 1.9A 3PIN DPAK - Bulk (Alt: FQD2N60CTF)
      RoHS: Compliant
      Min Qty: 1000
      Container: Bulk      		Americas - 0
      • 10000:$0.3079
      • 5000:$0.3159
      • 3000:$0.3199
      • 2000:$0.3239
      • 1000:$0.3259
      FQD2N60CTF
      DISTI # 512-FQD2N60CTF      		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
      RoHS: Compliant      		0
        FQD2N60CTF_F080
        DISTI # 512-FQD2N60CTF-F080        		ON SemiconductorMOSFET Trans MOS N-Ch 600V 1.9A 3-Pin 2+Tab
        RoHS: Compliant        		0
          FQD2N60CTFFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant          		1010
          • 1000:$0.3300
          • 500:$0.3500
          • 100:$0.3600
          • 25:$0.3800
          • 1:$0.4100
          FQD2N60CTFFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant          		6000
            FQD2N60CTFFairchild Semiconductor Corporation600V,1.9A,N-Ch MOSFET1150
            • 1:$0.5100
            • 100:$0.3600
            • 500:$0.2700
            • 1000:$0.2600
            Image Part # Description
            FQD2N80TM

            Mfr.#: FQD2N80TM

            OMO.#: OMO-FQD2N80TM

            		 MOSFET 800V N-Channel QFET
            FQD2N60CTF

            Mfr.#: FQD2N60CTF

            OMO.#: OMO-FQD2N60CTF

            		 MOSFET 600V N-Channel Adv Q-FET C-Series
            FQD2N50

            Mfr.#: FQD2N50

            OMO.#: OMO-FQD2N50-1190

            		 New and Original
            FQD2N50TM-NL

            Mfr.#: FQD2N50TM-NL

            OMO.#: OMO-FQD2N50TM-NL-1190

            		 New and Original
            FQD2N60C FQD2N60 2N60D

            Mfr.#: FQD2N60C FQD2N60 2N60D

            OMO.#: OMO-FQD2N60C-FQD2N60-2N60D-1190

            		 New and Original
            FQD2N60CTM

            Mfr.#: FQD2N60CTM

            OMO.#: OMO-FQD2N60CTM-ON-SEMICONDUCTOR

            		 MOSFET N-CH 600V 1.9A DPAK
            FQD2N60CTM-NL

            Mfr.#: FQD2N60CTM-NL

            OMO.#: OMO-FQD2N60CTM-NL-1190

            		 New and Original
            FQD2N65C

            Mfr.#: FQD2N65C

            OMO.#: OMO-FQD2N65C-1190

            		 New and Original
            FQD2N90TM,FQD2N90,D2N90,

            Mfr.#: FQD2N90TM,FQD2N90,D2N90,

            OMO.#: OMO-FQD2N90TM-FQD2N90-D2N90--1190

            		 New and Original
            FQD2N60CTM_WS

            Mfr.#: FQD2N60CTM_WS

            OMO.#: OMO-FQD2N60CTM-WS-126

            		 IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
            Availability
            Stock:
            Available
            On Order:
            4000
            Enter Quantity:
            Current price of FQD2N60CTF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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