FQD2N60CTF

FQD2N60CTF vs FQD2N60CTF-NL vs FQD2N60CTF_F080

 
PartNumberFQD2N60CTFFQD2N60CTF-NLFQD2N60CTF_F080
DescriptionMOSFET 600V N-Channel Adv Q-FET C-SeriesMOSFET N-CH 600V 1.9A DPAK
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETIC Chips-
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current1.9 A--
Rds On Drain Source Resistance4.7 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
SeriesFQD2N60C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesFQD2N60CTF_NL--
Unit Weight0.009184 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD2N60CTF MOSFET 600V N-Channel Adv Q-FET C-Series
ON Semiconductor
ON Semiconductor
FQD2N60CTF MOSFET N-CH 600V 1.9A DPAK
FQD2N60CTF_F080 MOSFET N-CH 600V 1.9A DPAK
FQD2N60CTF-NL New and Original
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