FQD2N60CTM

FQD2N60CTM-WS vs FQD2N60CTM

 
PartNumberFQD2N60CTM-WSFQD2N60CTM
DescriptionMOSFET 600V 1.9A NCH MOSFETMOSFET N-CH/600V/2A/A.QFET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current1.9 A1.9 A
Rds On Drain Source Resistance4.7 Ohms3.6 Ohms
Vgs Gate Source Voltage30 V30 V
ConfigurationSingleSingle
TradenameQFET-
PackagingReelReel
Height2.39 mm2.39 mm
Length6.73 mm6.73 mm
SeriesFQD2N60CFQD2N60C
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Product TypeMOSFETMOSFET
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Part # AliasesFQD2N60CTM_WSFQD2N60CTM_NL
Unit Weight0.009184 oz0.009171 oz
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 150 C
Pd Power Dissipation-2.5 W
Channel Mode-Enhancement
Type-MOSFET
Forward Transconductance Min-5 S
Fall Time-28 ns
Rise Time-25 ns
Typical Turn Off Delay Time-24 ns
Typical Turn On Delay Time-9 ns
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD2N60CTM-WS MOSFET 600V 1.9A NCH MOSFET
FQD2N60CTM MOSFET N-CH/600V/2A/A.QFET
ON Semiconductor
ON Semiconductor
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