FQP19N10

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

19 A

Rds On - Drain-Source Resistance:

100 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

75 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

16.3 mm

Length:

10.67 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

4.7 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

12 S

Fall Time:

65 ns

Product Type:

MOSFET

Rise Time:

150 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

7.5 ns

Part # Aliases:

FQP19N10_NL

Unit Weight:

0.050717 oz

Tags

FQP19N1, FQP19, FQP1, FQP