IRFH7934TRPBF

Mfr. #:: IRFH7934TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 30V 1 N-CH HEXFET 3.5mOhms 20nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFH7934TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRFH7934TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PQFN-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 76 A

Rds On - Drain-Source Resistance:: 3.5 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 20 nC

Pd - Power Dissipation:: 3.1 W

Configuration:: Single

Tradename:: StrongIRFET

Packaging:: Reel

Height:: 0.83 mm

Length:: 6 mm

Transistor Type:: 1 N-Channel

Width:: 5 mm

Brand:: Infineon Technologies

Moisture Sensitive:: Yes

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001570924

Tags: IRFH7934, IRFH793, IRFH79, IRFH7, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH7934TRPBF Description

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***ure Electronics: Single N-Channel 30 V 3.5 mOhm 30 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***Yang: Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R - Tape and Reel

***(Formerly Allied Electronics): MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ment14 APAC: MOSFET, N CH, 30V, 24A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 4.2 mOhm 31 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 93A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: Power MOSFET 30V 90A 4 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 30V 90A 4MOHM

***et: Trans MOSFET N-CH 30V 18A 8-Pin SO-FL T/R

***th Star Micro: Power MOSFET 30 V 90 A Single N-Channel SO-8 FL

***r Electronics: Power Field-Effect Transistor, 11A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: NTMFS4836NT1G, SINGLE MOSFETS;

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):2.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***ark: TAPE AND REEL // MOSFET, 30V, 50A, 4.1 mOhm, 15nC Qg, PQFN5x6

***ical: Trans MOSFET N-CH 30V 23A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***nell: MOSFET, N-CH, 30V, 50A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R

***icontronic: Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK

***r Electronics: Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-DPAK ;RoHS Compliant: Yes

***emi: Power MOSFET 30V 91A 3.3 mOhm Single N-Channel Thermally Enhanced SO-8FL T3 30V 20V NCH

***et: Trans MOSFET N-CH 30V 38.8A 8-Pin DFN EP T/R

***r Electronics: Small Signal Field-Effect Transistor, 12.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 30V 12.7A/91A 5DFN

***el Electronic: RES SMD 18.2K OHM 1% 1/4W 1210

***nell: NTMFS4923NET3G, SINGLE MOSFETS;

IRFH7934TRPBF More Information

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Part #	Mfg.	Description	Stock	Price
IRFH7934TRPBF DISTI # 31066294	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R RoHS: Compliant	4000	4000:$0.5299
IRFH7934TRPBF DISTI # IRFH7934TRPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.5659
IRFH7934TRPBF DISTI # IRFH7934TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH7934TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4229 8000:$0.4079 16000:$0.3929 24000:$0.3799 40000:$0.3729
IRFH7934TRPBF DISTI # SP001570924	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R (Alt: SP001570924) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.5999 8000:€0.4899 16000:€0.4499 24000:€0.4149 40000:€0.3849
IRFH7934TRPBF. DISTI # 32AC0693	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:3.1W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.4230 8000:$0.4080 16000:$0.3930 24000:$0.3930 40000:$0.3930
IRFH7934TRPBF DISTI # 70019708	Infineon Technologies AG	MOSFET,30V,24A,3.5 MOHM,20 NC QG,PQFN56 RoHS: Compliant	0	4000:$1.4100 8000:$1.3820 20000:$1.3400 40000:$1.2830 100000:$1.1990
IRFH7934TRPBF DISTI # 942-IRFH7934TRPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 3.5mOhms 20nC RoHS: Compliant	3998	1:$1.2100 10:$1.0300 100:$0.7910 500:$0.6990 1000:$0.5520
IRFH7934TRPBF	International Rectifier	Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4000	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
IRFH7934TRPBF	Infineon Technologies AG	INSTOCK	4804

Image	Part #	Description
	Mfr.#: IRFH7914TRPBF OMO.#: OMO-IRFH7914TRPBF	MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC
	Mfr.#: IRFH7934TR2PBF OMO.#: OMO-IRFH7934TR2PBF	MOSFET MOSFT 30V 24A 3.5mOhm 20nC
	Mfr.#: IRFH7934TR2PBF OMO.#: OMO-IRFH7934TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 24A 5X6 PQFN
	Mfr.#: IRFH7934TR2PBF. OMO.#: OMO-IRFH7934TR2PBF--1190	New and Original
	Mfr.#: IRFH7914TRPBF OMO.#: OMO-IRFH7914TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 15A PQFN
	Mfr.#: IRFH7922TRPBF OMO.#: OMO-IRFH7922TRPBF-1190	New and Original
	Mfr.#: IRFH7923PBF OMO.#: OMO-IRFH7923PBF-1190	New and Original
	Mfr.#: IRFH7932TR2PBF OMO.#: OMO-IRFH7932TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 24A PQFN56
	Mfr.#: IRFH7932TRPBF OMO.#: OMO-IRFH7932TRPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
	Mfr.#: IRFH7914TR2PBF OMO.#: OMO-IRFH7914TR2PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC

IRFH7934TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes