IRFU024NPBF

Mfr. #:: IRFU024NPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 55V 16A 75mOhm 13.3nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFU024NPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFU024NPBF Datasheet IRFU024NPBF Datasheet (P4-P6)IRFU024NPBF Datasheet (P7-P9)IRFU024NPBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 55 V

Id - Continuous Drain Current:: 16 A

Rds On - Drain-Source Resistance:: 75 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 13.3 nC

Pd - Power Dissipation:: 38 W

Configuration:: Single

Packaging:: Tube

Height:: 6.22 mm

Length:: 6.73 mm

Transistor Type:: 1 N-Channel

Width:: 2.38 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SP001552404

Unit Weight:: 0.139332 oz

Tags: IRFU024NP, IRFU024N, IRFU024, IRFU02, IRFU0, IRFU, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU024NPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;I-Pak (TO-251AA);PD 45W

***el Electronic: In a Tube of 75, IRFU024NPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin IPAK Infineon

***ure Electronics: Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-251

*** Source Electronics: Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 55V 17A I-PAK

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 14A/60V IPAK IRFU 024 NPBF

***icontronic: Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 55V, 16A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Fall Time tf:27ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Package / Case:IPAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:68A; Rise Time:34ns; SMD Marking:IRFU024N; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:4.9ns; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W

***ure Electronics: Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 60V 14A TO251 IRLU 024 NPBF

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 55V, 17A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***ser: MOSFETs- Power and Small Signal 60V 18A N-Channel No-Cancel/No-Return

***el Electronic: RES SMD 280K OHM 1% 1/4W 1206

***or: MOSFET N-CH 60V 18A IPAK

***ser: MOSFETs- Power and Small Signal 60V 18A N-Channel

***r Electronics: Power Field-Effect Transistor, 18A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: RES SMD 2.87K OHM 1% 1/4W 1206

***th Star Micro: Designed for low voltage high speed switching applications in power supplies converters and power motor controls and bridge circuits.

***ernational Rectifier: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a I-Pak Package

***SIT Distribution GmbH: Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;I-Pak (TO-251AA);PD 57W

***ure Electronics: Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: -55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***nsix Microsemi: Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ment14 APAC: MOSFET, P, -55V, -18A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-18A; Junction to Case Thermal Resistance A:2.2°C/W; On State resistance @ Vgs = 10V:110ohm; Package / Case:IPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:28ns; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 17.2 A, 42 mΩ, IPAK

***r Electronics: Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

Part #	Mfg.	Description	Stock	Price
IRFU024NPBF DISTI # 24450032	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK Tube	18858	2000:$0.2448 1000:$0.2592 500:$0.2640 250:$0.2736 52:$0.2928
IRFU024NPBF DISTI # 30607596	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK Tube	1575	38:$0.6613
IRFU024NPBF DISTI # IRFU024NPBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 17A I-PAK RoHS: Compliant Min Qty: 1 Container: Tube	2600In Stock	1000:$0.4692 500:$0.5814 100:$0.7357 10:$0.9180 1:$1.0300
IRFU024NPBF DISTI # C1S327400158813	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	1954	10:$0.3340
IRFU024NPBF DISTI # C1S322000496729	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	1575	100:$0.3340 50:$0.3520 10:$0.5290
IRFU024NPBF DISTI # C1S322000512674	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	18858	1000:$0.3300 500:$0.3600 100:$0.4370 50:$0.4910 25:$0.5400 5:$1.3500
IRFU024NPBF DISTI # IRFU024NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU024NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 1106	1:$0.3629 10:$0.3579 25:$0.3529 50:$0.3479 100:$0.3349 500:$0.3239 1000:$0.3179
IRFU024NPBF DISTI # SP001552404	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK (Alt: SP001552404) RoHS: Compliant Min Qty: 1	Europe - 9175	1:€0.4269 10:€0.4079 25:€0.4069 50:€0.4059 100:€0.3509 500:€0.2959 1000:€0.2539
IRFU024NPBF DISTI # IRFU024NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) IPAK (Alt: IRFU024NPBF) RoHS: Compliant Min Qty: 3000	Asia - 0
IRFU024NPBF DISTI # 63J7043	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 17A, IPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3PinsRoHS Compliant: Yes	673	1:$0.8400 10:$0.7140 100:$0.5490 500:$0.4850 1000:$0.3830 2500:$0.3620 10000:$0.3400
IRFU024NPBF. DISTI # 26AC0564	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 17A, IPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3PinsRoHS Compliant: Yes	0	1:$0.8400 10:$0.7140 100:$0.5490 500:$0.4850 1000:$0.3830 2500:$0.3620 10000:$0.3400
IRFU024NPBF DISTI # 70017045	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.075Ohm,ID 17A,I-Pak (TO-251AA),PD 45W RoHS: Compliant	6000	1:$0.6600 10:$0.5800 100:$0.5100 500:$0.4400 1000:$0.3900
IRFU024NPBF	Infineon Technologies AG	Single N-Channel 55 V 0.075 Ohm 20 nC HEXFET Power Mosfet - TO-251 RoHS: Compliant	4500Tube	50:$0.3500 250:$0.2850 500:$0.2750 1000:$0.2700 2000:$0.2600
IRFU024NPBF DISTI # 942-IRFU024NPBF	Infineon Technologies AG	MOSFET MOSFT 55V 16A 75mOhm 13.3nC RoHS: Compliant	5349	1:$0.8400 10:$0.7140 100:$0.5490 500:$0.4850 1000:$0.3830 3000:$0.3400
IRFU024NPBF DISTI # 5411607	Infineon Technologies AG	MOSFET N-CHANNEL 55V 17A IPAK, EA	16449	1:£2.0000 30:£0.3000 100:£0.2900
IRFU024NPBF DISTI # IRFU024NPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,55V,16A,38W,IPAK	531	1:$0.6079 3:$0.3776 10:$0.3080 75:$0.2648
IRFU024NPBF DISTI # TMOS1249	Infineon Technologies AG	N-CH 55V 17A 75mOhm TO-251AA RoHS: Compliant	Stock DE - 320Stock US - 0	75:$0.3220 225:$0.3037 450:$0.2853 1125:$0.2576 2625:$0.2485
IRFU024NPBF DISTI # IRFU024NPBF	Infineon Technologies AG	N-Ch 55V 17A 45W 0,075R TO251AA RoHS: Compliant	180	15:€0.4840 75:€0.2440 300:€0.1840 600:€0.1770
IRFU024NPBF	International Rectifier	INSTOCK	15975
IRFU024NPBF DISTI # XSKDRABV0021536	INF	RoHS: Compliant	75	2250:$0.4091
IRFU024NPBF DISTI # XSLY00000001057	INFINEON/IR	I-PAK (TO-251) RoHS: Compliant	2646	2400:$0.3000 2646:$0.2800
IRFU024NPBF DISTI # 8649987	Infineon Technologies AG	MOSFET, N, 55V, 16A, I-PAK RoHS: Compliant	2290	5:$0.8610 25:$0.7500 100:$0.6120 250:$0.5170 500:$0.4470 1000:$0.4230 5000:$0.4010
IRFU024NPBF DISTI # 8649987	Infineon Technologies AG	MOSFET, N, 55V, 16A, I-PAK RoHS: Compliant	688	5:£0.6180 25:£0.3060 100:£0.2960 250:£0.2850 500:£0.2730

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IRFU024NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes