SI4413CDY-T1-GE3

SI4413CDY-T1-GE3
Mfr. #:
SI4413CDY-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 15A 3.0W 7.5mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SI4413CDY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI4413CDY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
FETs - Single
Packaging
Reel
Part-Aliases
SI4413CDY-GE3
Unit-Weight
0.017870 oz
Package-Case
SO-8
Technology
Si
Number-of-Channels
1 Channel
Transistor-Type
1 P-Channel
Pd-Power-Dissipation
3 W
Id-Continuous-Drain-Current
9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
9.5 mOhms
Transistor-Polarity
P-Channel
Tags
SI4413C, SI4413, SI441, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
MOSFET P-CH 30V 8-SOIC
***et
P-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-15000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4413CDY-T1-GE3
DISTI # SI4413CDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8613
SI4413CDY-T1-GE3
DISTI # SI4413CDY-T1-GE3
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4413CDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.8439
  • 5000:$0.8189
  • 10000:$0.7849
  • 15000:$0.7639
  • 25000:$0.7429
SI4413CDY-T1-GE3
DISTI # 781-SI4413CDY-T1-GE3
Vishay IntertechnologiesMOSFET 30V 15A 3.0W 7.5mohm @ 10V
RoHS: Compliant
0
  • 2500:$0.7840
  • 5000:$0.7550
  • 10000:$0.7250
Image Part # Description
SI4413CDY-T1-GE3

Mfr.#: SI4413CDY-T1-GE3

OMO.#: OMO-SI4413CDY-T1-GE3

MOSFET 30V 15A 3.0W 7.5mohm @ 10V
SI4413CDY-T1-GE3

Mfr.#: SI4413CDY-T1-GE3

OMO.#: OMO-SI4413CDY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 30V 15A 3.0W 7.5mohm @ 10V
SI4413CDY-T1-E3

Mfr.#: SI4413CDY-T1-E3

OMO.#: OMO-SI4413CDY-T1-E3-1190

New and Original
SI4413CDY-T1-G

Mfr.#: SI4413CDY-T1-G

OMO.#: OMO-SI4413CDY-T1-G-1190

New and Original
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of SI4413CDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.09
$1.09
10
$1.03
$10.33
100
$0.98
$97.88
500
$0.92
$462.20
1000
$0.87
$870.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top