IRFP3006PBF

IRFP3006PBF
Mfr. #:
IRFP3006PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFET N-CH 60V 257A TO247
Lifecycle:
New from this manufacturer.
Datasheet:
IRFP3006PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFP3006PBF DatasheetIRFP3006PBF Datasheet (P4-P6)IRFP3006PBF Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
195 A
Rds On - Drain-Source Resistance:
2.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
300 nC
Pd - Power Dissipation:
375 W
Configuration:
Single
Packaging:
Tube
Height:
20.7 mm
Length:
15.87 mm
Transistor Type:
1 N-Channel
Width:
5.31 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
280 S
Fall Time:
189 ns
Product Type:
MOSFET
Rise Time:
182 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
118 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
SP001556714
Unit Weight:
1.340411 oz
Tags
IRFP3006P, IRFP300, IRFP30, IRFP3, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 270 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 189 / Rise Time ns = 182 / Turn-OFF Delay Time ns = 118 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375
***(Formerly Allied Electronics)
IRFP3206PBF N-channel MOSFET Transistor, 200 A, 60 V, 3-Pin TO-247AC
*** Source Electronics
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 60V 120A TO-247AC
***ure Electronics
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-247AC package, TO247-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-247-3
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***roFlash
Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, 75V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:75V; On Resistance Rds(on):1.46mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1280A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 0.009 Ohms Flange Mount Power Mosfet - TO-247
***nell
N CHANNEL MOSFET, 60V, 70A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs Typ: 4V
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ure Electronics
Single N-Channel 60 V 0.018 Ohms Flange Mount Power Mosfet - TO-247
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:70A; Package / Case:TO-247AC; Power Dissipation Pd:190W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 70A Tc 70A 190W 250ns
***ical
Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC
***nell
MOSFET, N, 60V, 70A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.8°C/W; On State resistance @ Vgs = 10V: 18ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 290A; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
Part # Mfg. Description Stock Price
IRFP3006PBF
DISTI # V99:2348_13892441
Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
79
  • 500:$2.4830
  • 250:$2.7590
  • 100:$3.0660
  • 50:$3.4060
  • 25:$3.7850
  • 10:$4.2050
  • 1:$5.2349
IRFP3006PBF
DISTI # V36:1790_13892441
Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
0
    IRFP3006PBF
    DISTI # IRFP3006PBF-ND
    Infineon Technologies AGMOSFET N-CH 60V 257A TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    894In Stock
    • 2800:$3.1548
    • 800:$3.9376
    • 400:$4.3883
    • 25:$5.3372
    • 10:$5.6450
    • 1:$6.2900
    IRFP3006PBF
    DISTI # 26761200
    Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    1200
    • 500:$3.5442
    • 250:$3.9501
    • 100:$4.1580
    • 10:$4.8015
    • 5:$5.6430
    IRFP3006PBF
    DISTI # 26198388
    Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    79
    • 500:$2.4830
    • 250:$2.7590
    • 100:$3.0660
    • 50:$3.4060
    • 25:$3.7850
    • 10:$4.2050
    • 3:$4.7590
    IRFP3006PBF
    DISTI # IRFP3006PBF
    Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRFP3006PBF)
    RoHS: Compliant
    Min Qty: 1200
    Container: Tube
    Americas - 0
    • 12000:$2.0900
    • 6000:$2.1900
    • 2400:$2.2900
    • 3600:$2.2900
    • 1200:$2.3900
    IRFP3006PBF
    DISTI # IRFP3006PBF
    Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin TO-247AC Tube - Bulk (Alt: IRFP3006PBF)
    Min Qty: 155
    Container: Bulk
    Americas - 0
    • 1550:$1.9900
    • 465:$2.0900
    • 775:$2.0900
    • 310:$2.1900
    • 155:$2.2900
    IRFP3006PBF
    DISTI # SP001556714
    Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin TO-247AC Tube (Alt: SP001556714)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.4800
    • 500:€3.1000
    • 250:€3.4500
    • 100:€3.6400
    • 10:€4.2000
    • 1:€4.9400
    IRFP3006PBF
    DISTI # 31Y2066
    Infineon Technologies AGMOSFET Transistor, N Channel, 195 A, 60 V, 0.0021 ohm, 10 V, 4 V RoHS Compliant: Yes293
    • 500:$3.9100
    • 250:$4.3000
    • 100:$4.5100
    • 50:$4.7200
    • 25:$4.9200
    • 10:$5.1300
    • 1:$5.9400
    IRFP3006PBF
    DISTI # 70394769
    Infineon Technologies AGIRFP3006PBF N-channel MOSFET Transistor,270 A,60 V,3-Pin TO-247
    RoHS: Compliant
    19
    • 1:$6.8100
    • 10:$6.0100
    • 100:$5.2400
    • 500:$4.5400
    • 1000:$4.0000
    IRFP3006PBF
    DISTI # 942-IRFP3006PBF
    Infineon Technologies AGMOSFET MOSFET N-CH 60V 257A TO247
    RoHS: Compliant
    412
    • 1:$5.7000
    • 10:$4.8500
    • 100:$4.2000
    • 250:$3.9900
    • 500:$3.5800
    IRFP3006PBFInternational RectifierPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
    RoHS: Compliant
    2515
    • 1000:$2.1300
    • 500:$2.2400
    • 100:$2.3400
    • 25:$2.4400
    • 1:$2.6200
    IRFP3006PBF
    DISTI # 8793321
    Infineon Technologies AGMOSFET IRFP3006PBF, PK102
    • 20:£1.8900
    • 2:£1.9400
    IRFP3006PBF
    DISTI # 8793321P
    Infineon Technologies AGMOSFET IRFP3006PBF, TU758
    • 20:£1.8900
    IRFP3006PBF
    DISTI # IRFP3006PBF
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,195A,375W,TO247AC19
    • 1:$5.5800
    • 3:$5.1100
    • 10:$4.1900
    • 100:$3.6300
    IRFP3006PBF
    DISTI # 2456721
    Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-247AC-3
    RoHS: Compliant
    293
    • 500:$5.5100
    • 250:$6.1400
    • 100:$6.4600
    • 10:$7.4600
    • 1:$8.7700
    IRFP3006PBF
    DISTI # 2456721
    Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-247AC-3308
    • 500:£2.7600
    • 250:£3.1600
    • 100:£3.3400
    • 10:£3.8500
    • 1:£5.0200
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    Availability
    Stock:
    412
    On Order:
    2395
    Enter Quantity:
    Current price of IRFP3006PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $5.70
    $5.70
    10
    $4.85
    $48.50
    100
    $4.20
    $420.00
    250
    $3.99
    $997.50
    500
    $3.58
    $1 790.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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