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IRFP3006PBF

P1-P3P4-P6P7-P9
IRFP3006PbF
4 www.irf.com © 2013 International Rectifier September 06, 2013
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
55
60
65
70
75
80
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
D
= 5mA
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical Coss Stored Energy
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
250
300
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
0.0 0.4 0.8 1.2 1.6 2.0
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0.1 1 10 100
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
LIMITED BY PACKAGE
0 10 20 30 40 50 60
V
DS,
Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
E
n
e
r
g
y
(
µ
J
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
20A
27A
BOTTOM
170A
Fig 7. Typical Source-to-Drain Diode
Forward Voltage
IRFP3006PbF
5 www.irf.com © 2013 International Rectifier September 06, 2013
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature
far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 170A
Fig 15. Maximum Avalanche Energy vs. Temperature
Fig 14. Typical Avalanche Current vs. Pulsewidth
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFP3006PbF
6 www.irf.com © 2013 International Rectifier September 06, 2013
Fig. 17 Typical Recovery Current vs. di
f
/dt
Fig 18. Typical Recovery Current vs. di
f
/dt
Fig 19. Typical Stored Charge vs. di
f
/dt
Fig. 16 Threshold Voltage vs. Temperature
Fig 20. Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250µA
100 200 300 400 500 600 700 800
di
f
/ dt - (A / µs)
0
4
8
12
16
20
I
R
R
M
-
(
A
)
I
F
= 112A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800
di
f
/ dt - (A / µs)
0
4
8
12
16
20
I
R
R
M
-
(
A
)
I
F
= 170A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800
di
f
/ dt - (A / µs)
0
100
200
300
400
500
600
700
Q
R
R
-
(
n
C
)
I
F
= 112A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800
di
f
/ dt - (A / µs)
0
100
200
300
400
500
600
700
Q
R
R
-
(
n
C
)
I
F
= 170A
V
R
= 51V
T
J
= 125°C
T
J
= 25°C
P1-P3P4-P6P7-P9

IRFP3006PBF

Mfr. #:
Buy IRFP3006PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFET N-CH 60V 257A TO247
Lifecycle:
New from this manufacturer.
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