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IRFP3006PBF

P1-P3P4-P6P7-P9
IRFP3006PbF
1 www.irf.com © 2013 International Rectifier September 06, 2013
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Gate Drain Source
G D S
V
DSS
60V
R
DS(on)
typ.
2.1m
max.
2.5m
I
D (Silicon Limited)
270A
I
D (Package Limited)
195A
Base Part Number Package Type Standard Pack Orderable Part Number

Form Quantity
IRFP3006PbF
TO-247 Tube 25 IRFP3006PbF
Absolute Maximum Ratings

Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
270
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V(Silicon Limited)
190
I
DM
Pulsed Drain Current 1080
P
D
@T
C
= 25°C
Maximum Power Dissipation 375
W
Linear Derating Factor 2.5
W/°C
V
GS
Gate-to-Source Voltage ± 20
V
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting torque, 6-32 or M3 screw 10lbf
in (1.1Nm)
Avalanche Characteristics

E
AS (Thermally limited)
Single Pulse Avalanche Energy 320 mJ
I
AR
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance

Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case
–––
0.4
R
CS
Case-to-Sink, Flat Greased Surface
0.24 –––
°C/W
R
JA
Junction-to-Ambient
––– 40
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 195
dv/dt
Peak Diode Recovery 10
V/ns
TO-247AC
G
D
S
D
S
G
IRFP3006PbF
2 www.irf.com © 2013 International Rectifier September 06, 2013
Static @ T
J
= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, I
D
= 5mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.1 2.5
m
V
GS
= 10V, I
D
= 170A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA V
DS
= 60V, V
GS
= 0V
––– ––– 250
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
V
GS
= -20V
R
G
Internal Gate Resistance ––– 2.0 –––

Dynamic @ T
J
= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 280 ––– ––– S V
DS
= 25V, I
D
= 170A
Q
g
Total Gate Charge ––– 200 300
nC
I
D
= 170A
Q
gs
Gate-to-Source Charge ––– 37 –––
V
DS
=30V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 60 –––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 140 ––– I
D
= 170A, V
DS
=0V, V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 16 –––
ns
V
DD
= 39V
t
r
Rise Time ––– 182 –––
I
D
= 170A
t
d(off)
Turn-Off Delay Time ––– 118 –––
R
G
= 2.7
t
f
Fall Time ––– 189 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 8970 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 1020 –––
V
DS
= 50V
C
rss
Reverse Transfer Capacitance ––– 534 –––
ƒ = 1.0 MHz, See Fig. 5
C
oss
eff. (ER) Effective Output Capacitance
(Energy Related)
––– 1480 ––– V
GS
= 0V, V
DS
= 0V to 48V 
See Fig. 11
C
oss
eff. (TR) Effective Output Capacitance
(Time Related)
––– 1920 ––– V
GS
= 0V, V
DS
= 0V to 48V
Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 257
A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– ––– 1028
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 170A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 44 ––– ns T
J
= 25°C
––– 48 –––
T
J
= 125°C
Q
rr
Reverse Recovery Charge ––– 63 ––– nC T
J
= 25°C
––– 77 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.4 ––– A T
J
= 25°C
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. Junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.022mH, R
G
= 50, I
AS
= 170A,V
GS
=10V. Part not Recommended for use above
this value.
ISD ≤ 170A, di/dt ≤ 1360A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while V
DS
is rising from 0 to 80% V
DSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
* All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet.
D
S
G
V
R
= 51V,
I
F
= 170A
di/dt = 100A/µs
IRFP3006PbF
3 www.irf.com © 2013 International Rectifier September 06, 2013
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 170A
V
GS
= 10V
Fig 4. Normalized On-Resistance vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
3.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
3.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
2.0 3.0 4.0 5.0 6.0 7.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
V
DS
= 25V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
4000
8000
12000
16000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 40 80 120 160 200 240 280
Q
G
Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
I
D
= 170A
P1-P3P4-P6P7-P9

IRFP3006PBF

Mfr. #:
Buy IRFP3006PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFET N-CH 60V 257A TO247
Lifecycle:
New from this manufacturer.
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