IXTT20N50D

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

330 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

78.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

400 W

Configuration:

Single

Channel Mode:

Depletion

Packaging:

Tube

Height:

5.1 mm

Length:

14 mm

Series:

IXTT20N50

Transistor Type:

1 N-Channel

Type:

High Voltage MOSFET

Width:

16.05 mm

Brand:

IXYS

Forward Transconductance - Min:

4 S

Fall Time:

75 ns

Product Type:

MOSFET

Rise Time:

85 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

110 ns

Typical Turn-On Delay Time:

35 ns

Unit Weight:

0.158733 oz

Tags

IXTT2, IXTT, IXT