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IPN80R600P7ATMA1

IPN80R600P7ATMA1
Mfr. #:
IPN80R600P7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPN80R600P7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPN80R600P7ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-223-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
510 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
7.4 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPN80R600P7 SP001665004
Tags
IPN80R6, IPN80, IPN8, IPN
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 800V 8A 3-Pin SOT-223 T/R
***ical
Trans MOSFET N-CH 800V 8A
***ronik
N-CH 800V 8,0A 600mOhm SOT223
***ure Electronics
800V, 8A, 0.60 Ohms, SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ark
LOW POWER_NEW
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, 7.4W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:7.4W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 800V, 8A, 7.4W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:7.4W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Part # Mfg. Description Stock Price
IPN80R600P7ATMA1
DISTI # V72:2272_19084647		Infineon Technologies AGIPN80R600P71450
  • 1000:$0.6341
  • 500:$0.8315
  • 250:$0.8965
  • 100:$0.9307
  • 25:$1.1755
  • 10:$1.1781
  • 1:$1.3516
IPN80R600P7ATMA1
DISTI # V36:1790_19084647		Infineon Technologies AGIPN80R600P70
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1CT-ND    		Infineon Technologies AGCOOLMOS P7 800V SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2683In Stock
    • 1000:$0.8720
    • 500:$1.0805
    • 100:$1.3672
    • 10:$1.7060
    • 1:$1.9100
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1DKR-ND    		Infineon Technologies AGCOOLMOS P7 800V SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2683In Stock
    • 1000:$0.8720
    • 500:$1.0805
    • 100:$1.3672
    • 10:$1.7060
    • 1:$1.9100
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1TR-ND    		Infineon Technologies AGCOOLMOS P7 800V SOT-223
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 15000:$0.7352
    • 6000:$0.7605
    • 3000:$0.7960
    IPN80R600P7ATMA1
    DISTI # 31271992    		Infineon Technologies AGIPN80R600P73000
    • 30000:$0.5605
    • 18000:$0.5711
    • 12000:$0.5903
    • 6000:$0.6133
    • 3000:$0.6354
    IPN80R600P7ATMA1
    DISTI # 29415779    		Infineon Technologies AGIPN80R600P71450
    • 1000:$0.6817
    • 500:$0.8939
    • 250:$0.9637
    • 100:$1.0005
    • 25:$1.2637
    • 11:$1.2665
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 800V 8A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R600P7ATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 3000
    • 3000:$0.6619
    • 6000:$0.6389
    • 12000:$0.6149
    • 18000:$0.5949
    • 30000:$0.5839
    IPN80R600P7ATMA1
    DISTI # SP001665004    		Infineon Technologies AGTrans MOSFET N-CH 800V 8A 3-Pin SOT-223 T/R (Alt: SP001665004)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€1.0149
    • 6000:€0.8509
    • 12000:€0.7109
    • 18000:€0.6189
    • 30000:€0.5799
    IPN80R600P7ATMA1
    DISTI # 93AC7130    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, 7.4W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2930
    • 1000:$0.5530
    • 500:$0.7000
    • 250:$0.7460
    • 100:$0.7920
    • 50:$0.8690
    • 25:$0.9470
    • 10:$1.0200
    • 1:$1.2100
    IPN80R600P7ATMA1
    DISTI # 726-IPN80R600P7ATMA1    		Infineon Technologies AGMOSFET LOW POWER_NEW
    RoHS: Compliant    		2310
    • 1:$1.5100
    • 10:$1.2800
    • 100:$0.9900
    • 500:$0.8750
    • 1000:$0.6910
    IPN80R600P7ATMA1
    DISTI # IPN80R600P7    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,5.5A,7.4W,PG-SOT2231
    • 1:$1.1200
    • 5:$0.9900
    • 20:$0.8800
    • 100:$0.8000
    • 500:$0.7400
    IPN80R600P7ATMA1
    DISTI # 2986480    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, 7.4W, SOT-223
    RoHS: Compliant    		2925
    • 5000:$0.9050
    • 1000:$0.9340
    • 500:$1.1400
    • 250:$1.2300
    • 100:$1.3200
    • 25:$1.6000
    • 5:$1.7900
    IPN80R600P7ATMA1
    DISTI # 2986480    		Infineon Technologies AGMOSFET, N-CH, 800V, 8A, 7.4W, SOT-223
    RoHS: Compliant    		2925
    • 500:£0.6430
    • 250:£0.7010
    • 100:£0.7550
    • 25:£0.9570
    • 5:£1.0500
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    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of IPN80R600P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.51
    $1.51
    10
    $1.28
    $12.80
    100
    $0.99
    $99.00
    500
    $0.88
    $437.50
    1000
    $0.69
    $691.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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