 |  | | |
| PartNumber | IPN80R600P7ATMA1 | IPN80R600P7ATMA1-CUT TAPE | IPN80R600P7 |
| Description | MOSFET LOW POWER_NEW | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 510 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 7.4 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | IPN80R600P7 SP001665004 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPN80R600P7ATMA1 | MOSFET LOW POWER_NEW | |
| IPN80R600P7ATMA1 | COOLMOS P7 800V SOT-223 | ||
| IPN80R600P7ATMA1-CUT TAPE | New and Original | ||
| IPN80R600P7 | New and Original |