PartNumber | IPN80R1K2P7ATMA1 | IPN80R1K4P7ATMA1 | IPN80R2K0P7ATMA1 |
Description | MOSFET LOW POWER_NEW | MOSFET LOW POWER_NEW | MOSFET LOW POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | PG-SOT-223-3 | PG-SOT-223-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
Id Continuous Drain Current | 4.5 A | 4 A | 3 A |
Rds On Drain Source Resistance | 1 Ohms | 1.2 Ohms | 1.7 Ohms |
Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 11 nC | 10 nC | 9 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 6.8 W | 7 W | 6 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 20 ns | 20 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 8 ns | 8 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | 40 ns | 40 ns |
Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
Part # Aliases | IPN80R1K2P7 SP001664998 | IPN80R1K4P7 SP001657528 | IPN80R2K0P7 SP001664996 |
Tradename | - | CoolMOS | CoolMOS |
Series | - | CoolMOS P7 | CoolMOS P7 |