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IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1
Mfr. #:
IPN80R2K0P7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPN80R2K0P7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPN80R2K0P7ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-SOT-223-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
1.7 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
6 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPN80R2K0P7 SP001664996
Tags
IPN80R2, IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2 Ohm 9 nC CoolMOS™ Power Mosfet - SOT-223
***i-Key
MOSFET N-CHANNEL 800V 3A SOT223
***ronik
N-CH 800V 3A 2000mOhm SOT-223
***ical
P7 Power Transistor
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 3A, 6.4W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.7Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 3A, 6.4W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.4W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 800V, 3A, 6.4W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:3A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.4W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Part # Mfg. Description Stock Price
IPN80R2K0P7ATMA1
DISTI # V36:1790_18205913		Infineon Technologies AGIPN80R2K0P7ATMA10
  • 3000000:$0.2672
  • 1500000:$0.2675
  • 300000:$0.2940
  • 30000:$0.3413
  • 3000:$0.3493
IPN80R2K0P7ATMA1
DISTI # IPN80R2K0P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CHANNEL 800V 3A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4918In Stock
  • 1000:$0.3970
  • 500:$0.4962
  • 100:$0.6277
  • 10:$0.8190
  • 1:$0.9300
IPN80R2K0P7ATMA1
DISTI # IPN80R2K0P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CHANNEL 800V 3A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4918In Stock
  • 1000:$0.3970
  • 500:$0.4962
  • 100:$0.6277
  • 10:$0.8190
  • 1:$0.9300
IPN80R2K0P7ATMA1
DISTI # IPN80R2K0P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CHANNEL 800V 3A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.3051
  • 15000:$0.3131
  • 6000:$0.3252
  • 3000:$0.3493
IPN80R2K0P7ATMA1
DISTI # IPN80R2K0P7ATMA1		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPN80R2K0P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2909
  • 18000:$0.2959
  • 12000:$0.3069
  • 6000:$0.3179
  • 3000:$0.3299
IPN80R2K0P7ATMA1
DISTI # SP001664996		Infineon Technologies AGLOW POWER_NEW (Alt: SP001664996)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€0.3019
  • 18000:€0.3179
  • 12000:€0.3699
  • 6000:€0.4349
  • 3000:€0.5059
IPN80R2K0P7ATMA1
DISTI # 93AC7126		Infineon Technologies AGMOSFET, N-CH, 800V, 3A, 6.4W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2945
  • 1000:$0.3720
  • 500:$0.4020
  • 250:$0.4330
  • 100:$0.4640
  • 50:$0.5490
  • 25:$0.6340
  • 10:$0.7190
  • 1:$0.8590
IPN80R2K0P7ATMA1
DISTI # 726-IPN80R2K0P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		4543
  • 1:$0.8500
  • 10:$0.7120
  • 100:$0.4590
  • 1000:$0.3680
IPN80R2K0P7ATMA1
DISTI # IPN80R2K0P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,1.9A,6.4W,PG-SOT22318
  • 500:$0.3900
  • 100:$0.4300
  • 20:$0.4700
  • 5:$0.5300
  • 1:$0.6000
IPN80R2K0P7ATMA1
DISTI # 2986477		Infineon Technologies AGMOSFET, N-CH, 800V, 3A, 6.4W, SOT-223
RoHS: Compliant		2945
  • 1000:$0.4600
  • 500:$0.5410
  • 250:$0.5870
  • 100:$0.6350
  • 25:$0.9090
  • 5:$0.9980
IPN80R2K0P7ATMA1
DISTI # 2986477		Infineon Technologies AGMOSFET, N-CH, 800V, 3A, 6.4W, SOT-2232950
  • 500:£0.3100
  • 250:£0.3330
  • 100:£0.3570
  • 10:£0.6070
  • 1:£0.7560
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of IPN80R2K0P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.85
$0.85
10
$0.71
$7.12
100
$0.46
$45.90
1000
$0.37
$368.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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