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HGT1S7N60C3DS

HGT1S7N60C3DS
Mfr. #:
HGT1S7N60C3DS
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 7A 600V TF=275NS
Lifecycle:
New from this manufacturer.
Datasheet:
HGT1S7N60C3DS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
E
Technology:
Si
Package / Case:
TO-263AB-3
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
1.6 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
14 A
Pd - Power Dissipation:
60 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
14 A
Height:
4.83 mm
Length:
10.67 mm
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
14 A
Gate-Emitter Leakage Current:
+/- 250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
50
Subcategory:
IGBTs
Unit Weight:
0.056438 oz
Tags
HGT1S7N60C, HGT1S7, HGT1S, HGT1, HGT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
HGT1S7N60C3DS
DISTI # 512-HGT1S7N60C3DS		ON SemiconductorIGBT Transistors 7A 600V TF=275NS
RoHS: Compliant		0
    HGT1S7N60C3DS9A
    DISTI # 512-HGT1S7N60C3DS9A    		ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
    RoHS: Compliant    		0
      HGT1S7N60C3DSHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		8600
      • 1000:$1.1300
      • 500:$1.1900
      • 100:$1.2400
      • 25:$1.2900
      • 1:$1.3900
      HGT1S7N60C3DS9AHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		25600
      • 1000:$2.0700
      • 500:$2.1800
      • 100:$2.2600
      • 25:$2.3600
      • 1:$2.5400
      Image Part # Description
      HGT1S7N60C3DS9A

      Mfr.#: HGT1S7N60C3DS9A

      OMO.#: OMO-HGT1S7N60C3DS9A

      		 IGBT Transistors 14a 600V N-Ch IGBT UFS Series
      HGT1S7N60A4

      Mfr.#: HGT1S7N60A4

      OMO.#: OMO-HGT1S7N60A4-1190

      		 New and Original
      HGT1S7N60A4DS,G7N60A4D

      Mfr.#: HGT1S7N60A4DS,G7N60A4D

      OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

      		 New and Original
      HGT1S7N60A4DS9A

      Mfr.#: HGT1S7N60A4DS9A

      OMO.#: OMO-HGT1S7N60A4DS9A-1190

      		 Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S7N60A4S9A

      Mfr.#: HGT1S7N60A4S9A

      OMO.#: OMO-HGT1S7N60A4S9A-1190

      		 IGBT Transistors 600V N-Channel IGBT SMPS Series
      HGT1S7N60B3D

      Mfr.#: HGT1S7N60B3D

      OMO.#: OMO-HGT1S7N60B3D-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3DS

      Mfr.#: HGT1S7N60B3DS

      OMO.#: OMO-HGT1S7N60B3DS-1190

      		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      HGT1S7N60B3DS9A

      Mfr.#: HGT1S7N60B3DS9A

      OMO.#: OMO-HGT1S7N60B3DS9A-1190

      		 IGBT Transistors 14A 600V UFS N-Ch
      HGT1S7N60B3S

      Mfr.#: HGT1S7N60B3S

      OMO.#: OMO-HGT1S7N60B3S-1190

      		 New and Original
      HGT1S7N60C3DS

      Mfr.#: HGT1S7N60C3DS

      OMO.#: OMO-HGT1S7N60C3DS-ON-SEMICONDUCTOR

      		 IGBT 600V 14A 60W TO263AB
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of HGT1S7N60C3DS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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