Jan2N930/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-72-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

15 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

3 V

Collector-Emitter Saturation Voltage:

0.4 V

Maximum DC Collector Current:

50 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

200 at 3 mA, 1 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

100 at 10 uA, 5 V

Pd - Power Dissipation:

200 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

Jan2N9, Jan2N, Jan2, JAN