PartNumber | JAN2N918UB | JAN2N918UB/TR | JAN2N918 |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT BJTs |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Waffle | - | Foil Bag |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | Si |
Mounting Style | - | SMD/SMT | Through Hole |
Package / Case | - | LCC-3 | TO-72-3 |
Transistor Polarity | - | NPN | NPN |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 15 V | 15 V |
Collector Base Voltage VCBO | - | 30 V | 30 V |
Emitter Base Voltage VEBO | - | 3 V | 3 V |
Collector Emitter Saturation Voltage | - | 0.4 V | 0.4 V |
Maximum DC Collector Current | - | 50 mA | - |
Minimum Operating Temperature | - | - 65 C | - 65 C |
Maximum Operating Temperature | - | + 200 C | + 200 C |
DC Current Gain hFE Max | - | 200 at 3 mA, 1 V | - |
DC Collector/Base Gain hfe Min | - | 10 at 500 uA, 10 V | - |
Pd Power Dissipation | - | 200 mW | 200 mW |
Continuous Collector Current | - | - | 50 mA |