IRGP30B60KD-EP

Mfr. #:: IRGP30B60KD-EP
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V UltraFast 5-40kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRGP30B60KD-EP Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IRGP30B60KD-EP more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.35 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 304 W

Minimum Operating Temperature:: - 55 C

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: SP001549784

Unit Weight:: 1.340411 oz

Tags: IRGP30B60KD-EP, IRGP30B60KD-E, IRGP30B6, IRGP30B, IRGP30, IRGP3, IRGP, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGP30B60KD-EP Description

***ineon SCT: 600V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ure Electronics: IRGP30B60KD-EP Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AD

***ow.cn: Trans IGBT Chip N-CH 600V 60A 304000mW 3-Pin(3+Tab) TO-247AC Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***ineon: Target Applications: Pump; Solar; UPS; Welding

*** Electronic Components: IGBT Transistors 600V UltraFast 5-40kHz

***or: AUTOMOTIVE WARP2 IGBT ULTRAFAST

***p One Stop Global: Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W

***nell: IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): IGBT with Ultrafast Soft Recovery Diode; Warp2 Series; 600 V; 22 A; TO-247AC

***ure Electronics: IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: 600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***ark: Igbt, High Speed, 600V, 60A, To-247A

***nell: IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AD

***ark: TUBE / 600V Warp2 150kHz Copack IGBT in a TO-247AC package

***ure Electronics: IRGP35B60PD Series 600 V 60 A Ultrafast Soft Recovery Diode - TO247AD

***i-Key Marketplace: AUTOMOTIVE WARP2 IGBT ULTRAFAST

***ineon: Target Applications: AC-DC; Fan; PFC; Pump

***roFlash: Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin(3+Tab) TO-247AD

***ark: Transistor, Igbt, 600V, 60A, To-247Ad Rohs Compliant: Yes

***el Electronic: IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

***i-Key: IGBT 650V 60A 270W TO247

***S: French Electronic Distributor since 1988

IRGP30B60KD-EP More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRGP30B60KD-EP DISTI # V99:2348_13892799	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	459	1000:$3.6470 500:$4.1529 100:$4.5750 25:$5.2670 1:$6.7034
IRGP30B60KD-EP DISTI # V36:1790_13892799	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	0
IRGP30B60KD-EP DISTI # IRGP30B60KD-EP-ND	Infineon Technologies AG	IGBT 600V 60A 304W TO247AD RoHS: Compliant Min Qty: 1 Container: Tube	195In Stock	1000:$3.6529 500:$4.1941 100:$4.8164 25:$5.5468 1:$6.4400
IRGP30B60KD-EP DISTI # 31672140	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	1188	4:$3.1104
IRGP30B60KD-EP DISTI # 30308668	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	459	1000:$3.9205 500:$4.4644 100:$4.9181 25:$5.6620 2:$6.5511
IRGP30B60KD-EP DISTI # 32416775	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	150	250:$4.4133 100:$4.5441 25:$5.2371
IRGP30B60KD-EP DISTI # SP001549784	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC (Alt: SP001549784) RoHS: Compliant Min Qty: 1	Europe - 400	1000:€2.5900 500:€2.7900 100:€2.8900 50:€3.0900 25:€3.1900 10:€3.2900 1:€3.5900
IRGP30B60KD-EP DISTI # IRGP30B60KD-EP	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRGP30B60KD-EP) Min Qty: 111 Container: Bulk	Americas - 0	1110:$2.7900 555:$2.8900 333:$2.9900 222:$3.0900 111:$3.1900
IRGP30B60KD-EP DISTI # IRGP30B60KD-EP	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRGP30B60KD-EP) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	2400:$3.1900 4000:$3.1900 1600:$3.2900 800:$3.4900 400:$3.5900
IRGP30B60KD-EP	Infineon Technologies AG	IRGP30B60KD-EP Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AD RoHS: Compliant	255Tube	5:$5.4700 25:$4.6900 50:$4.5400 100:$4.3900 250:$4.2000
IRGP30B60KD-EP DISTI # 942-IRGP30B60KD-EP	Infineon Technologies AG	IGBT Transistors 600V UltraFast 5-40kHz RoHS: Compliant	776	1:$6.1300 10:$5.5400 25:$5.2800 100:$4.5800 250:$4.3800 500:$3.9900 1000:$3.4800
IRGP30B60KD-EP	International Rectifier	RoHS: Not Compliant	250	1000:$2.9700 500:$3.1300 100:$3.2600 25:$3.4000 1:$3.6600
IRGP30B60KD-EP DISTI # 9074851P	Infineon Technologies AG	IGBT N-CHANNEL 600V 60A TO-247AC, TU	95	1250:£2.9700 500:£3.5160 250:£3.7180 50:£3.9780
IRGP30B60KD-EP	International Rectifier		153
IRGP30B60KD-EP DISTI # IRGP30B60KD-EP	Infineon Technologies AG	Transistor: IGBT,600V,60A,304W,TO247-3	52	1:$5.4600 5:$4.7600 25:$4.0300 100:$3.5100
IRGP30B60KD-EP DISTI # XSKDRABV0021564	Infineon Technologies AG	Insulated Gate BipolarTransistor,20AI(C),1200VV(BR)CES, N-Channel,TO-247AC RoHS: Compliant	325 in Stock0 on Order	325:$5.2200 150:$5.5920
IRGP30B60KD-EP DISTI # XSFP00000074478	Infineon Technologies AG	RoHS: Compliant	138 in Stock0 on Order	138:$6.0800 19:$6.4400
IRGP30B60KDEP	International Rectifier	RoHS: Not Compliant	Europe - 274
IRGP30B60KDEPBF	International Rectifier	RoHS: Compliant	Europe - 95

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Availability

Stock:: 589
On Order:: 2572
Enter Quantity:

Current price of IRGP30B60KD-EP is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.13~~; ~~$6.13~~

10: ~~$5.54~~; ~~$55.40~~

25: ~~$5.28~~; ~~$132.00~~

100: ~~$4.58~~; ~~$458.00~~

250: ~~$4.38~~; ~~$1 095.00~~

500: ~~$3.99~~; ~~$1 995.00~~

1000: ~~$3.48~~; ~~$3 480.00~~

2500: ~~$3.35~~; ~~$8 375.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRGP30B60KD-EP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes