IPP65R280C6XKSA1

Mfr. #:: IPP65R280C6XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
Lifecycle:: New from this manufacturer.
Datasheet:: IPP65R280C6XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 13.8 A

Rds On - Drain-Source Resistance:: 250 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 45 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 104 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: CoolMOS C6

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 105 ns

Typical Turn-On Delay Time:: 13 ns

Part # Aliases:: IPP65R280C6XKSA1 SP000785058

Unit Weight:: 0.211644 oz

Tags: IPP65R28, IPP65R2, IPP65, IPP6, IPP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP65R280C6XKSA1 Description

***ical: Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 13.8A, 650V, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 650V 13.8A 3-Pin TO-220 Tube - Rail/Tube

***el Electronic: INFINEON IPP60R280P6Power MOSFET, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 13.8A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ical: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***nell: MOSFET,N CH,600V,13.8A,TO220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Current Id Max:13.8A; Power Dissipation Pd:104W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: Single N-Channel 600 V 250 mOhm 35 nC CoolMOS Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package

***ure Electronics: STP18N65M5 Series 650 V 0.22 Ohm N-Channel MDmesh V Power Mosfet - TO-220

***ical: Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 650V, 15A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220

***ical: Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N CH, 500V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. of Pins:3Pins RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220

***el Electronic: FAIRCHILD SEMICONDUCTOR FCP260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V

***r Electronics: Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220 - Rail/Tube

***nell: MOSFET, N-CH, 600V, 15A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
IPP65R280C6XKSA1 DISTI # IPP65R280C6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 13.8A TO220 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP65R280C6XKSA1 DISTI # 22AC4486	Infineon Technologies AG	MOSFET, N-CH, 13.8A, 650V, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:13.8A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0
IPP65R280C6 DISTI # 726-IPP65R280C6	Infineon Technologies AG	MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 RoHS: Compliant	0	1:$2.5200 10:$2.1500 100:$1.7200 500:$1.5000
IPP65R280C6XKSA1 DISTI # 726-IPP65R280C6XKSA1	Infineon Technologies AG	MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 RoHS: Compliant	0

Image	Part #	Description
	Mfr.#: IPP65R280E6XKSA1 OMO.#: OMO-IPP65R280E6XKSA1	MOSFET LOW POWER_LEGACY
	Mfr.#: IPP65R280C6XKSA1 OMO.#: OMO-IPP65R280C6XKSA1	MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
	Mfr.#: IPP65R280E6XKSA1 OMO.#: OMO-IPP65R280E6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13.8A TO220
	Mfr.#: IPP65R280C6 OMO.#: OMO-IPP65R280C6-1190	Trans MOSFET N-CH 650V 13.8A 3-Pin TO-220 Tube (Alt: IPP65R280C6)
	Mfr.#: IPP65R280C6XKSA1 OMO.#: OMO-IPP65R280C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 13.8A TO220
	Mfr.#: IPP65R280E6 OMO.#: OMO-IPP65R280E6-126	IGBT Transistors MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS E6

IPP65R280C6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes