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| PartNumber | IPP65R280E6XKSA1 | IPP65R280C6XKSA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPP65R280E6XKSA1 SP000795268 | IPP65R280C6XKSA1 SP000785058 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| RoHS | - | Y |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 650 V |
| Id Continuous Drain Current | - | 13.8 A |
| Rds On Drain Source Resistance | - | 250 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 45 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 104 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Series | - | CoolMOS C6 |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 12 ns |
| Rise Time | - | 11 ns |
| Factory Pack Quantity | - | 500 |
| Typical Turn Off Delay Time | - | 105 ns |
| Typical Turn On Delay Time | - | 13 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP65R280E6XKSA1 | MOSFET LOW POWER_LEGACY | |
| IPP65R280C6XKSA1 | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 | ||
Infineon Technologies |
IPP65R280E6XKSA1 | MOSFET N-CH 650V 13.8A TO220 | |
| IPP65R280C6XKSA1 | MOSFET N-CH 650V 13.8A TO220 | ||
| IPP65R280C6 | Trans MOSFET N-CH 650V 13.8A 3-Pin TO-220 Tube (Alt: IPP65R280C6) | ||
| IPP65R280E6 | IGBT Transistors MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS E6 |