IRLR8729TRPBF

IRLR8729TRPBF
Mfr. #:
IRLR8729TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRLR8729TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8729TRPBF DatasheetIRLR8729TRPBF Datasheet (P4-P6)IRLR8729TRPBF Datasheet (P7-P9)IRLR8729TRPBF Datasheet (P10-P11)
ECAD Model:
More Information:
IRLR8729TRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
58 A
Rds On - Drain-Source Resistance:
11.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.35 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
10 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
55 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
91 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
47 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
11 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SP001569082
Unit Weight:
0.139332 oz
Tags
IRLR8729T, IRLR8729, IRLR872, IRLR87, IRLR8, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 30V, 58A, 8.9 MOHM, 10 NC QG, LOGIC LEVEL, D-PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ineon
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free; RoHS compliant
***ark
N CH POWER MOSFET, HEXFET, 30V, 58A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRLR8729TRPBF
DISTI # V72:2272_13889893
Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
3999
  • 3000:$0.1538
  • 1000:$0.1831
  • 500:$0.2391
  • 250:$0.2417
  • 100:$0.2442
  • 25:$0.4039
  • 10:$0.4152
  • 1:$0.5111
IRLR8729TRPBF
DISTI # IRLR8729TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 58A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
724In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
IRLR8729TRPBF
DISTI # IRLR8729TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 30V 58A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
724In Stock
  • 1000:$0.2311
  • 500:$0.2991
  • 100:$0.4079
  • 10:$0.5440
  • 1:$0.6500
IRLR8729TRPBF
DISTI # IRLR8729TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 58A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
On Order
  • 2000:$0.2046
IRLR8729TRPBF
DISTI # 29437599
Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
6000
  • 20000:$0.1449
  • 12000:$0.1516
  • 8000:$0.1564
  • 4000:$0.1612
  • 2000:$0.1621
IRLR8729TRPBF
DISTI # 30331686
Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
3999
  • 3000:$0.1538
  • 1000:$0.1831
  • 500:$0.2391
  • 250:$0.2417
  • 100:$0.2442
  • 53:$0.4039
IRLR8729TRPBF
DISTI # IRLR8729TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR8729TRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 2000
  • 2000:$0.1689
  • 4000:$0.1679
  • 8000:$0.1629
  • 12000:$0.1579
  • 20000:$0.1509
IRLR8729TRPBF
DISTI # 13AC9246
Infineon Technologies AGMOSFET, N-CH, 30V, 58A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes1080
  • 1:$0.5530
  • 10:$0.4590
  • 25:$0.4040
  • 50:$0.3470
  • 100:$0.2920
  • 250:$0.2720
  • 500:$0.2530
  • 1000:$0.2330
IRLR8729TRPBF
DISTI # 70019885
Infineon Technologies AGMOSFET,30V,58A,8.9 MOHM,10 NC QG,LOGIC LEVEL,D-PAK
RoHS: Compliant
0
  • 4000:$1.1400
  • 8000:$1.1170
  • 20000:$1.0830
  • 40000:$1.0370
  • 100000:$0.9690
IRLR8729TRPBF
DISTI # 942-IRLR8729TRPBF
Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC
RoHS: Compliant
761
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 2000:$0.1740
IRLR8729TRPBF
DISTI # IRLR8729PBF-GURT
Infineon Technologies AGN-LogL 30V 58A 55W 0,0089R TO252AA
RoHS: Compliant
0
  • 50:€0.2140
  • 100:€0.1740
  • 500:€0.1540
  • 3000:€0.1485
IRLR8729TRPBF
DISTI # 2726026
Infineon Technologies AGMOSFET, N-CH, 30V, 58A, TO-252AA
RoHS: Compliant
1080
  • 1:$1.0400
  • 10:$0.8680
  • 100:$0.6510
  • 500:$0.4770
  • 1000:$0.3690
IRLR8729TRPBF
DISTI # 2726026
Infineon Technologies AGMOSFET, N-CH, 30V, 58A, TO-252AA
RoHS: Compliant
1210
  • 5:£0.3760
  • 25:£0.3540
  • 100:£0.2020
  • 250:£0.1930
  • 500:£0.1830
IRLR8729TRPBF
DISTI # C1S322000504815
Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
3999
  • 250:$0.2424
  • 100:$0.2445
  • 25:$0.3711
  • 10:$0.4123
IRLR8729TRPBF
DISTI # C1S322000504824
Infineon Technologies AGTrans MOSFET N-CH 30V 58A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
6000
  • 2000:$0.2300
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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of IRLR8729TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.52
$0.52
10
$0.43
$4.34
100
$0.26
$26.50
1000
$0.20
$205.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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