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SI2333CDS-T1-E3

SI2333CDS-T1-E3
Mfr. #:
SI2333CDS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SI2333CDS-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2333CDS-T1-E3 DatasheetSI2333CDS-T1-E3 Datasheet (P4-P6)SI2333CDS-T1-E3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI2333CDS-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
12 V
Id - Continuous Drain Current:
7.1 A
Rds On - Drain-Source Resistance:
35 mOhms
Vgs th - Gate-Source Threshold Voltage:
400 mV
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
15 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.45 mm
Length:
2.9 mm
Series:
SI2
Transistor Type:
1 P-Channel
Width:
1.6 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
18.5 S
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
35 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
45 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SI2333CDS-E3
Unit Weight:
0.000282 oz
Tags
SI2333CDS-T1, SI2333CDS-T, SI2333C, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, P CH, -12V, -7.1A, TO-236-3; Transistor Polarity:P Channel; Continuous D
***ure Electronics
Single P-Channel 12 V 35 mO 25 nC Surface Mount Power Mosfet - SOT-23
***et
Trans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
***enic
12V 7.1A 35m´Î@4.5V5.1A 2.5W 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***icontronic
Small Signal Field-Effect Transistor, 7.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P CH, -12V, -7.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.0285ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
***(Formerly Allied Electronics)
MOSFET, Power,P-Ch,VDSS -12V,RDS(ON) 0.025Ohm,ID -4.1A,TO-236 (SOT-23),PD 0.75W
***ure Electronics
Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23
***enic
12V 4.1A 750mW 32m´Î@4.5V5.3A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.1A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
***(Formerly Allied Electronics)
SI2365EDS-T1-GE3 P-channel MOSFET Transistor; 4.7 A; 20 V; 3-Pin TO-236
***ment14 APAC
MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Source Voltage Vds:-20V; On Resistance
***nsix Microsemi
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, P-CH, -20V, -5.9A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.9A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0265ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***enic
12V 5A 2W 50m´Î@10V3.5A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50mOhm @ 3.5A, 10V 5A Tc -55°C~150°C TJ Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2333CDS-T1-E3
DISTI # 33959248		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		18000
  • 3000:$0.2437
SI2333CDS-T1-E3
DISTI # SI2333CDS-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		102705In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2333CDS-T1-E3
DISTI # SI2333CDS-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		102705In Stock
  • 1000:$0.1962
  • 500:$0.2539
  • 100:$0.3231
  • 10:$0.4330
  • 1:$0.5100
SI2333CDS-T1-E3
DISTI # SI2333CDS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 7.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		99000In Stock
  • 30000:$0.1434
  • 15000:$0.1512
  • 6000:$0.1625
  • 3000:$0.1736
SI2333CDS-T1-E3
DISTI # V36:1790_09216807		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.3109
SI2333CDS-T1-E3
DISTI # V72:2272_09216807		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
    SI2333CDS-T1-E3
    DISTI # SI2333CDS-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SI2333CDS-T1-E3
      DISTI # SI2333CDS-T1-E3      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333CDS-T1-E3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.2436
      • 18000:$0.2503
      • 12000:$0.2575
      • 6000:$0.2684
      • 3000:$0.2766
      SI2333CDS-T1-E3
      DISTI # SI2333CDS-T1-E3      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R (Alt: SI2333CDS-T1-E3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.2229
      • 18000:€0.2399
      • 12000:€0.2599
      • 6000:€0.3019
      • 3000:€0.4419
      SI2333CDS-T1-E3
      DISTI # 88T7691      		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 88T7691)
      RoHS: Not Compliant
      Min Qty: 1
      Container: Ammo Pack      		Americas - 0
      • 1000:$0.3040
      • 500:$0.3800
      • 250:$0.4200
      • 100:$0.4600
      • 50:$0.5340
      • 25:$0.6070
      • 1:$0.7600
      SI2333CDS-T1-E3
      DISTI # 88T7691      		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, TO-236-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV RoHS Compliant: Yes3455
      • 500:$0.4800
      • 250:$0.5300
      • 100:$0.5810
      • 50:$0.6740
      • 25:$0.7660
      • 1:$0.9480
      SI2333CDS-T1-E3
      DISTI # 33P5183      		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, TO-236-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0285ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:3Pins RoHS Compliant: Yes0
      • 50000:$0.2460
      • 30000:$0.2570
      • 20000:$0.2760
      • 10000:$0.2950
      • 5000:$0.3200
      • 1:$0.3270
      SI2333CDS-T1-E3
      DISTI # 70026413      		Vishay SiliconixTRANS MOSFET P-CH 12V 5.1A 3-PIN SOT-23T/R
      RoHS: Compliant      		0
      • 3000:$0.3140
      SI2333CDS-T1-E3
      DISTI # 781-SI2333CDS-E3      		Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
      RoHS: Compliant      		22583
      • 1:$0.7500
      • 10:$0.6060
      • 100:$0.4590
      • 500:$0.3800
      • 1000:$0.3040
      • 3000:$0.2750
      • 6000:$0.2560
      • 9000:$0.2470
      • 24000:$0.2370
      SI2333CDS-T1-E3Vishay IntertechnologiesSingle P-Channel 12 V 35 mO 25 nC Surface Mount Power Mosfet - SOT-23
      RoHS: Compliant      		24000Reel
      • 3000:$0.1730
      SI2333CDS-T1-E3Vishay Siliconix5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-2365
      • 1:$0.3600
      SI2333CDS-T1-E3Vishay Semiconductors5100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236876
      • 124:$0.2700
      • 15:$0.4050
      • 1:$0.9000
      SI2333CDS-T1-E3Vishay Intertechnologies 463
        SI2333CDS-T1-E3Vishay IntertechnologiesMOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
        RoHS: Compliant        		Americas -
          SI2333CDS-T1-E3
          DISTI # 2459915          		Vishay IntertechnologiesMOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
          RoHS: Compliant          		3455
          • 500:$0.3830
          • 100:$0.4870
          • 10:$0.6530
          • 1:$0.7700
          SI2333CDS-T1-E3
          DISTI # 2335289          		Vishay IntertechnologiesMOSFET, P CH, -12V, -7.1A, SOT-23
          RoHS: Compliant          		3455
          • 100:$0.4870
          • 10:$0.6530
          • 1:$0.7700
          SI2333CDS-T1-E3
          DISTI # 2335289          		Vishay IntertechnologiesMOSFET, P CH, -12V, -7.1A, SOT-23
          RoHS: Compliant          		3455
          • 500:£0.2320
          • 250:£0.2390
          • 100:£0.2450
          • 25:£0.3480
          • 5:£0.3700
          SI2333CDS-T1-E3
          DISTI # XSFP00000063442          		Vishay Siliconix 
          RoHS: Compliant          		18000 in Stock0 on Order
          • 18000:$0.2307
          • 3000:$0.2471
          Image Part # Description
          RUC002N05HZGT116

          Mfr.#: RUC002N05HZGT116

          OMO.#: OMO-RUC002N05HZGT116

          		 MOSFET Nch 50V Vds 0.2A 2.4Rds(on) SOT-23
          RC0402FR-07100KL

          Mfr.#: RC0402FR-07100KL

          OMO.#: OMO-RC0402FR-07100KL

          		 Thick Film Resistors - SMD 100K OHM 1%
          RC0402FR-07100RL

          Mfr.#: RC0402FR-07100RL

          OMO.#: OMO-RC0402FR-07100RL

          		 Thick Film Resistors - SMD 100 OHM 1%
          RC0402FR-0720KL

          Mfr.#: RC0402FR-0720KL

          OMO.#: OMO-RC0402FR-0720KL

          		 Thick Film Resistors - SMD 20K OHM 1%
          RC0402FR-0710KL

          Mfr.#: RC0402FR-0710KL

          OMO.#: OMO-RC0402FR-0710KL

          		 Thick Film Resistors - SMD 10K OHM 1%
          LXES15AAA1-133

          Mfr.#: LXES15AAA1-133

          OMO.#: OMO-LXES15AAA1-133

          		 ESD Suppressors / TVS Diodes 15 VDC
          22-03-5025

          Mfr.#: 22-03-5025

          OMO.#: OMO-22-03-5025-410

          		 Headers & Wire Housings 2.5 VERT HDR SPOX 2P shrouded
          RUC002N05HZGT116

          Mfr.#: RUC002N05HZGT116

          OMO.#: OMO-RUC002N05HZGT116-ROHM-SEMI

          		 1.2V DRIVE NCH MOSFET
          ABS07-32.768KHZ-T

          Mfr.#: ABS07-32.768KHZ-T

          OMO.#: OMO-ABS07-32-768KHZ-T-ABRACON

          		 Crystals 32.768KHz 12.5pf 3.2 x 1.5 x 0.9mm
          GRM033R60J105ME11D

          Mfr.#: GRM033R60J105ME11D

          OMO.#: OMO-GRM033R60J105ME11D-MURATA-ELECTRONICS

          		 Cap Ceramic 1uF 6.3V X5R 20% Pad SMD 0201 85C T/R
          Availability
          Stock:
          22
          On Order:
          2005
          Enter Quantity:
          Current price of SI2333CDS-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $0.75
          $0.75
          10
          $0.61
          $6.06
          100
          $0.46
          $45.90
          500
          $0.38
          $190.00
          1000
          $0.30
          $304.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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