PartNumber | SI2333DDS-T1-GE3 | SI2333CDS-T1-E3 | SI2333CDS-T1-GE3 |
Description | MOSFET -12V Vds 8V Vgs SOT-23 | MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V | MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 12 V | 12 V | 12 V |
Id Continuous Drain Current | 6 A | 7.1 A | 7.1 A |
Rds On Drain Source Resistance | 23 mOhms | 35 mOhms | 35 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 400 mV | 400 mV |
Vgs Gate Source Voltage | 8 V | 4.5 V | 4.5 V |
Qg Gate Charge | 35 nC | 15 nC | 15 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.7 W | 2.5 W | 2.5 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.45 mm | 1.45 mm | 1.45 mm |
Length | 2.9 mm | 2.9 mm | 2.9 mm |
Series | SI2 | SI2 | SI2 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 1.6 mm | 1.6 mm | 1.6 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 18 S | 18.5 S | 18.5 S |
Fall Time | 20 ns | 12 ns | 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 35 ns | 35 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 45 ns | 45 ns | 45 ns |
Typical Turn On Delay Time | 26 ns | 13 ns | 13 ns |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
Part # Aliases | - | SI2333CDS-E3 | SI2333CDS-GE3 |