SI2333DS-T1-GE3

Mfr. #:: SI2333DS-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
Lifecycle:: New from this manufacturer.
Datasheet:: SI2333DS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI2333DS-T1-GE3 Datasheet SI2333DS-T1-GE3 Datasheet (P4-P6)SI2333DS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:: SI2333DS-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.45 mm

Length:: 2.9 mm

Series:: SI2

Width:: 1.6 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SI2333DS-GE3

Unit Weight:: 0.000282 oz

Tags: SI2333DS-T, SI2333DS, SI2333D, SI2333, SI233, SI23, SI2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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SI2333DS-T1-GE3 Description

***et: Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R

***i-Key: MOSFET P-CH 12V 4.1A SOT23-3

***: P-CHANNEL 12-V (D-S) MOSFET

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:750mW

SI2333DS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2333DS-T1-GE3 DISTI # V36:1790_09216809	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.3409 1500000:$0.3410 300000:$0.3506 30000:$0.3652 3000:$0.3675
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5850In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5850In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.3325 15000:$0.3360 6000:$0.3491 3000:$0.3675
SI2333DS-T1-GE3 DISTI # SI2333DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3199 18000:$0.3289 12000:$0.3379 6000:$0.3529 3000:$0.3629
SI2333DS-T1-GE3 DISTI # 84R8032	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 84R8032) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.4690 500:$0.5950 250:$0.6440 100:$0.6910 50:$0.7960 25:$0.9010 1:$1.1000
SI2333DS-T1-GE3 DISTI # 15R4914	Vishay Intertechnologies	P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):25mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes	0	10000:$0.3180 6000:$0.3250 4000:$0.3380 2000:$0.3750 1000:$0.4130 1:$0.4300
SI2333DS-T1-GE3 DISTI # 84R8032	Vishay Intertechnologies	P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes	1670	1000:$0.4740 500:$0.6010 250:$0.6500 100:$0.6990 50:$0.8040 25:$0.9100 1:$1.1000
SI2333DS-T1-GE3 DISTI # 781-SI2333DS-GE3	Vishay Intertechnologies	MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V RoHS: Compliant	4820	1:$0.8700 10:$0.7200 100:$0.5520 500:$0.4750 1000:$0.3740 3000:$0.3490 6000:$0.3320 9000:$0.3250
SI2333DS-T1-GE3	Vishay Intertechnologies	MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V RoHS: Compliant	Americas -
SI2333DS-T1-GE3 DISTI # 1867182	Vishay Intertechnologies	P CH MOSFET RoHS: Compliant	1260	250:£0.5890 100:£0.6330 50:£0.7280 25:£0.8250 1:£0.9960
SI2333DS-T1-GE3 DISTI # 1867182	Vishay Intertechnologies	P CHANNEL MOSFET RoHS: Compliant	1670	3000:$0.5540 1000:$0.5650 500:$0.7170 100:$0.8330 10:$1.0900 1:$1.3100

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of SI2333DS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.87~~; ~~$0.87~~

10: ~~$0.72~~; ~~$7.20~~

100: ~~$0.55~~; ~~$55.20~~

500: ~~$0.48~~; ~~$237.50~~

1000: ~~$0.37~~; ~~$374.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI2333DS-T 4
SI2333DS 5
SI2333D 10
SI2333 22
SI233 36
SI23 561
SI2 1125

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SI2333DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes