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GA10SICP12-263

GA10SICP12-263
Mfr. #:
GA10SICP12-263
Manufacturer:
GeneSiC Semiconductor
Description:
MOSFET 1200V 25A Std SIC CoPak
Lifecycle:
New from this manufacturer.
Datasheet:
GA10SICP12-263 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
GA10SICP12-263 more Information
Product Attribute
Attribute Value
Manufacturer:
GeneSiC Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
SMD/SMT
Package / Case:
TO-263-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Id - Continuous Drain Current:
25 A
Rds On - Drain-Source Resistance:
100 mOhms
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
55 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
170 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.597 mm
Length:
10.668 mm
Type:
Transistor/Schottky Diode Co-Pack
Width:
9.169 mm
Brand:
GeneSiC Semiconductor
Product Type:
MOSFET
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Unit Weight:
0.056438 oz
Tags
GA10S, GA10, GA1
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Silicon Carbide Junction Transistors/Schottky Diode Co-Packs
GeneSiC Silicon Carbide Junction Transistors/Schottky Diode Co-Packs are a hybrid silicon IGBT with a silicon carbide (SiC) rectifier in a module. GeneSiC uses the latest generation of low-loss IGBTs and pairs them with their silicon carbide diodes. Replacing the traditional silicon freewheeling diode (FWD) with silicon carbide schottky rectifiers offers revolutionary switching performance. These improvements will usher in a new era in power conversion applications. These devices are offered in TO-263-7L or SOT-227 packages.Learn More
Part # Mfg. Description Stock Price
GA10SICP12-263
DISTI # 1242-1318-ND		GeneSic Semiconductor IncTRANS SJT 1200V 25A TO263-7
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$28.8945
GA10SICP12-263
DISTI # 905-GA10SICP12-263		GeneSic Semiconductor IncMOSFET 1200V 25A Std SIC CoPak
RoHS: Compliant		58
  • 1:$39.1000
  • 5:$37.1700
  • 10:$36.1800
  • 25:$35.1700
  • 50:$33.2400
  • 100:$30.8900
  • 250:$28.3500
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Availability
Stock:
57
On Order:
2040
Enter Quantity:
Current price of GA10SICP12-263 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$39.10
$39.10
5
$37.17
$185.85
10
$36.18
$361.80
25
$35.17
$879.25
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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