IRF40H210

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

201 A

Rds On - Drain-Source Resistance:

1.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

70 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

125 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

StrongIRFET

Packaging:

Reel

Height:

0.83 mm

Length:

6 mm

Transistor Type:

1 N-Channel

Width:

5 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

113 S

Fall Time:

34 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

65 ns

Typical Turn-On Delay Time:

9.2 ns

Part # Aliases:

SP001571340

Tags

IRF40H, IRF40, IRF4, IRF