IRF40H

IRF40H210 vs IRF40H233XTMA1

 
PartNumberIRF40H210IRF40H233XTMA1
DescriptionMOSFET TRENCH_MOSFETSMOSFET
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMT-
Package / CasePQFN-8-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage40 V-
Id Continuous Drain Current201 A-
Rds On Drain Source Resistance1.4 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge70 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation125 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameStrongIRFET-
PackagingReelReel
Height0.83 mm-
Length6 mm-
Transistor Type1 N-Channel-
Width5 mm-
BrandInfineon / IRInfineon Technologies
Forward Transconductance Min113 S-
Fall Time34 ns-
Product TypeMOSFETMOSFET
Rise Time25 ns-
Factory Pack Quantity40004000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time65 ns-
Typical Turn On Delay Time9.2 ns-
Part # AliasesSP001571340SP001683272
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF40H210 MOSFET TRENCH_MOSFETS
Infineon Technologies
Infineon Technologies
IRF40H233XTMA1 MOSFET
IRF40H233XTMA1 TRENCH <= 40V
IRF40H210 MOSFET N-CH 40V 100A PQFN5X6
IRF40H210TRPBF New and Original
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