MAT03EH

MAT03EH
Mfr. #:
MAT03EH
Manufacturer:
Analog Devices Inc.
Description:
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
Lifecycle:
New from this manufacturer.
Datasheet:
MAT03EH Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MAT03EH more Information MAT03EH Product Details
Product Attribute
Attribute Value
Manufacturer:
Analog Devices Inc.
Product Category:
Bipolar Transistors - BJT
RoHS:
N
Package / Case:
TO-78-6
Transistor Polarity:
PNP
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
36 V
Collector- Base Voltage VCBO:
36 V
Collector-Emitter Saturation Voltage:
100 mV
Maximum DC Collector Current:
20 mA
Gain Bandwidth Product fT:
190 MHz
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 125 C
Series:
MAT03
Height:
4.7 mm (Max)
Length:
9.4 mm (Max)
Packaging:
Bulk
Width:
9.4 mm (Max)
Brand:
Analog Devices
DC Collector/Base Gain hfe Min:
80 at 10 uA, 36 V
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Tags
MAT03, MAT0, MAT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
***ical
Trans GP BJT PNP 36V 0.02A 6-Pin TO-78 Tube
***log Devices
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ohm) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter break-down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
Part # Mfg. Description Stock Price
MAT03EH
DISTI # MAT03EH-ND
Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
RoHS: Not compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    MAT03EHZ
    DISTI # MAT03EHZ-ND
    Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Limited Supply - Call
      MAT03EH
      DISTI # 584-MAT03EH
      Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
      RoHS: Not compliant
      0
        MAT03EHZ
        DISTI # 584-MAT03EHZ
        Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
        RoHS: Compliant
        0
          MAT03EHAnalog Devices IncSmall Signal Bipolar Transistor, 0.02A I(C), 36V V(BR)CEO, 2-Element, PNP, Silicon, TO-78
          RoHS: Not Compliant
          1310
          • 1000:$33.2500
          • 500:$35.0000
          • 100:$36.4400
          • 25:$38.0000
          • 1:$40.9200
          MAT03EHAnalog Devices IncBipolar Junction Transistor, Pair, PNP Type, TO-781
          • 1:$30.3121
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          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
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