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IRF8513PBF

IRF8513PBF
Mfr. #:
IRF8513PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF8513PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8513PBF DatasheetIRF8513PBF Datasheet (P4-P6)IRF8513PBF Datasheet (P7-P9)IRF8513PBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
22.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
5.7 nC
Pd - Power Dissipation:
1.5 W
Configuration:
Dual
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
2 N-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
95
Subcategory:
MOSFETs
Part # Aliases:
SP001555762
Unit Weight:
0.019048 oz
Tags
IRF85, IRF8, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
; Continuous Drain Current, Id:8A; On Resistance, Rds(on):15.5mohm; No. of Pins:8
***nell
DUAL N CH MOSFET, 30V, 8A, SOIC
***et
Trans MOSFET N-CH 30V 8A/11A 8-Pin SO
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Part # Mfg. Description Stock Price
IRF8513PBF
DISTI # IRF8513PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 8A/11A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8513PBF
    DISTI # 70018021    		Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,11A,SO-8
    RoHS: Compliant    		0
    • 3800:$1.0600
    • 7600:$1.0390
    • 19000:$1.0070
    • 38000:$0.9650
    • 95000:$0.9010
    IRF8513PBF
    DISTI # 942-IRF8513PBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
    RoHS: Compliant    		0
      IRF8513PBFInfineon Technologies AGDual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET Power Mosfet - SOIC-8
      RoHS: Compliant      		42Tube
      • 25:$0.4750
      • 300:$0.4150
      • 1250:$0.3600
      IRF8513PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 455
        Image Part # Description
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF

        		 MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8513TRPBF

        Mfr.#: IRF8513TRPBF

        OMO.#: OMO-IRF8513TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8520

        Mfr.#: IRF8520

        OMO.#: OMO-IRF8520-1190

        		 New and Original
        Availability
        Stock:
        Available
        On Order:
        2500
        Enter Quantity:
        Current price of IRF8513PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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