TSM4ND65CI C0G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

ITO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

2.6 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

16.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

41.6 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

TSM4ND65CI

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

25 ns

Product Type:

MOSFET

Rise Time:

19 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

17 ns

Typical Turn-On Delay Time:

6 ns

Tags

TSM4ND6, TSM4ND, TSM4N, TSM4, TSM