2N5551CBU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

160 V

Collector- Base Voltage VCBO:

180 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

0.2 V

Maximum DC Collector Current:

0.6 A

Gain Bandwidth Product fT:

300 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

250

Height:

4.7 mm

Length:

4.7 mm

Packaging:

Bulk

Width:

3.93 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

0.6 A

DC Collector/Base Gain hfe Min:

80

Pd - Power Dissipation:

625 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.008466 oz

Tags

2N5551C, 2N5551, 2N555, 2N55, 2N5