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FDMA86251

FDMA86251
Mfr. #:
FDMA86251
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET FET 150V 175.0 MOHM MLP22
Lifecycle:
New from this manufacturer.
Datasheet:
FDMA86251 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDMA86251 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
MicroFET-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
2.4 A
Rds On - Drain-Source Resistance:
333 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
4.1 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.4 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Reel
Height:
0.75 mm
Length:
2 mm
Series:
FDMA86251
Transistor Type:
1 N-Channel
Width:
2 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
4.7 S
Fall Time:
2.3 ns
Product Type:
MOSFET
Rise Time:
1.7 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
5.9 ns
Unit Weight:
0.001058 oz
Tags
FDMA86, FDMA8, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 150V, 2.4A, 175mΩ
***ark
MV5 150V/20V single n-channel powertrench MOSFET - 6LD,MLP,DUAL,NON-JEDEC,2MM SQUARE,SINGLE TIED DAP
***rchild Semiconductor
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
***nell
MOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.148ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
FDT86244 Series 150 V 128 mOhm N.Ch. SMT PowerTrench Mosfet - SOT-223-3
***emi
N-Channel Power Trench® MOSFET 150V, 2.8A, 128mΩ
***Yang
Trans MOSFET N-CH 150V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, N CH, 150V, 2.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:4V
*** Source Electronics
Trans MOSFET N-CH 150V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 150V 2.6A SOT223
***ure Electronics
Single N-Channel 150 V 185 mOhm 12 nC HEXFET® Power Mosfet - SOT-223
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 185 Milliohms,ID 2.6A,SOT-223,PD 2.8W,-55C
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***roFlash
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, N, 150V, 2.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.185ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.6 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 185 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.8
***emi
N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ
*** Source Electronics
MOSFET N-CH 150V 2.3A 6SSOT / Trans MOSFET N-CH 150V 2.3A 6-Pin TSOT-23 T/R
***ure Electronics
N-Channel 150 V 2.3 A 144 mOhm SuperSOT-6 Mosfet
*** Stop Electro
Small Signal Field-Effect Transistor, 2.3A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***emi
P-Channel QFET® MOSFET -150V, -3A, 1.5Ω
***ure Electronics
FDMC2523P Series -150 V -3 A 1.5 Ohm Surface Mount P-Channel QFET - MLP-8
***el Electronic
FDMC2523P P-Channel MOSFET, 1.8 A, 150 V QFET, 8-Pin MLP ON Semiconductor
***rchild Semiconductor
These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
***et Europe
Trans MOSFET P-CH 150V 2.8A 8-Pin PowerPAK 1212 T/R
***ark
P-Ch PowerPAK 1212-8 Cu wire 150V 1200mohm @ 10V
***el Electronic
MOSFET -150V 1.2ohm@-10V -2.8A P-Ch T-FET
***or
MOSFET P-CH 150V 2.8A PPAK1212-8
***enic
PowerPAK-1212-8 Pre-ordered Chips ROHS
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FDMA86251
DISTI # V72:2272_06337834		ON SemiconductorMV5 150V/20V SINGLE N-CHANNEL1930
  • 1000:$0.4084
  • 500:$0.5038
  • 250:$0.5392
  • 100:$0.5991
  • 25:$0.7000
  • 10:$0.8556
  • 1:$0.9912
FDMA86251
DISTI # V36:1790_06337834		ON SemiconductorMV5 150V/20V SINGLE N-CHANNEL0
  • 3000000:$0.3259
  • 1500000:$0.3262
  • 300000:$0.3536
  • 30000:$0.4030
  • 3000:$0.4113
FDMA86251
DISTI # FDMA86251CT-ND		ON SemiconductorMOSFET N-CH 150V 2.4A 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		31718In Stock
  • 1000:$0.4539
  • 500:$0.5749
  • 100:$0.6960
  • 10:$0.8930
  • 1:$1.0000
FDMA86251
DISTI # FDMA86251DKR-ND		ON SemiconductorMOSFET N-CH 150V 2.4A 6-MLP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		31718In Stock
  • 1000:$0.4539
  • 500:$0.5749
  • 100:$0.6960
  • 10:$0.8930
  • 1:$1.0000
FDMA86251
DISTI # FDMA86251TR-ND		ON SemiconductorMOSFET N-CH 150V 2.4A 6-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		30000In Stock
  • 15000:$0.3760
  • 6000:$0.3907
  • 3000:$0.4113
FDMA86251
DISTI # 29421027		ON SemiconductorMV5 150V/20V SINGLE N-CHANNEL1930
  • 18:$0.9912
FDMA86251
DISTI # FDMA86251		ON SemiconductorTrans MOSFET N-CH 150V 2.4A 6-Pin MLP T/R (Alt: FDMA86251)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.3469
  • 18000:€0.3739
  • 12000:€0.4049
  • 6000:€0.4419
  • 3000:€0.5399
FDMA86251
DISTI # FDMA86251		ON SemiconductorTrans MOSFET N-CH 150V 2.4A 6-Pin MLP T/R - Tape and Reel (Alt: FDMA86251)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3449
  • 18000:$0.3539
  • 12000:$0.3579
  • 6000:$0.3629
  • 3000:$0.3649
FDMA86251
DISTI # 99AC9165		ON SemiconductorMOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.148ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2465
  • 1000:$0.4240
  • 500:$0.5370
  • 250:$0.5730
  • 100:$0.6080
  • 50:$0.6690
  • 25:$0.7310
  • 10:$0.7920
  • 1:$0.9190
FDMA86251
DISTI # 49Y8332		ON SemiconductorFET 150V 170.0 MOHM MLP22 / REEL0
  • 1000:$0.5380
  • 500:$0.5830
  • 250:$0.6450
  • 100:$0.7120
  • 1:$0.9160
FDMA86251
DISTI # 512-FDMA86251		ON SemiconductorMOSFET FET 150V 175.0 MOHM MLP22
RoHS: Compliant		45668
  • 1:$0.9100
  • 10:$0.7840
  • 100:$0.6020
  • 500:$0.5320
  • 1000:$0.4200
  • 3000:$0.3730
  • 9000:$0.3590
FDMA86251
DISTI # 2992327		ON SemiconductorMOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN
RoHS: Compliant		2465
  • 1000:$0.5290
  • 500:$0.5950
  • 250:$0.6580
  • 100:$0.7210
  • 25:$1.1000
  • 5:$1.1900
FDMA86251
DISTI # 2992327		ON SemiconductorMOSFET, N-CH, 150V, 2.4A, 2.4W, WDFN2465
  • 500:£0.3860
  • 250:£0.4120
  • 100:£0.4370
  • 10:£0.6190
  • 1:£0.7540
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Mfr.#: EMIF06-MSD02N16

OMO.#: OMO-EMIF06-MSD02N16-STMICROELECTRONICS

 FILTER RC(PI) 45 OHM/20PF SMD
NX3225SA-16.000000MHZ-T1

Mfr.#: NX3225SA-16.000000MHZ-T1

OMO.#: OMO-NX3225SA-16-000000MHZ-T1-NDK

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CSTNE8M00G550000R0

Mfr.#: CSTNE8M00G550000R0

OMO.#: OMO-CSTNE8M00G550000R0-MURATA-ELECTRONICS

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Mfr.#: C2012C0G2A333J125AE

OMO.#: OMO-C2012C0G2A333J125AE-TDK

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Availability
Stock:
44
On Order:
2027
Enter Quantity:
Current price of FDMA86251 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.91
$0.91
10
$0.78
$7.84
100
$0.60
$60.20
500
$0.53
$266.00
1000
$0.42
$420.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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