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IRG4BC30FDPBF

IRG4BC30FDPBF
Mfr. #:
IRG4BC30FDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Fast 1-8kHz
Lifecycle:
New from this manufacturer.
Datasheet:
IRG4BC30FDPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC30FDPBF DatasheetIRG4BC30FDPBF Datasheet (P4-P6)IRG4BC30FDPBF Datasheet (P7-P9)IRG4BC30FDPBF Datasheet (P10)
ECAD Model:
More Information:
IRG4BC30FDPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
1.59 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
31 A
Pd - Power Dissipation:
100 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
31 A
Height:
8.77 mm
Length:
10.54 mm
Width:
4.69 mm
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
1000
Subcategory:
IGBTs
Part # Aliases:
SP001545780
Unit Weight:
0.211644 oz
Tags
IRG4BC30FD, IRG4BC30F, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ied Electronics & Automation
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
***ineon SCT
Copacked 600V IGBT in a TO-220AB package with a fast 1-8 kHz soft recovery diode, TO220COPAK-3, RoHS
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 160 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Device Marking:IRG4BC30FDPBF; Fall Time Max:160ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Part # Mfg. Description Stock Price
IRG4BC30FDPBF
DISTI # 33637326		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube847
  • 500:$2.2176
  • 250:$2.4750
  • 100:$2.6037
  • 50:$2.7324
  • 25:$2.8710
  • 10:$2.9997
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF-ND		Infineon Technologies AGIGBT 600V 31A 100W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		879In Stock
  • 1000:$1.9794
  • 500:$2.3469
  • 100:$2.7570
  • 10:$3.3650
  • 1:$3.7500
IRG4BC30FDPBF
DISTI # V36:1790_13892378		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube0
  • 1000000:$1.5690
  • 500000:$1.5730
  • 100000:$2.0600
  • 10000:$3.0150
  • 1000:$3.1800
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30FDPBF)
Min Qty: 216
Container: Bulk		Americas - 0
  • 2160:$1.3900
  • 648:$1.4900
  • 1080:$1.4900
  • 216:$1.5900
  • 432:$1.5900
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC30FDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
IRG4BC30FDPBF
DISTI # SP001545780		Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB (Alt: SP001545780)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.2900
  • 500:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.5900
  • 10:€1.6900
  • 1:€1.7900
IRG4BC30FDPBF
DISTI # 38K2905		Infineon Technologies AGIGBT Single Transistor, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes918
  • 500:$2.2600
  • 250:$2.5300
  • 100:$2.6600
  • 50:$2.7900
  • 25:$2.9300
  • 10:$3.0600
  • 1:$3.6100
IRG4BC30FDPBF
DISTI # 70018428		Infineon Technologies AG600V FAST 1-8 KHZ COPACK IGBT IN A TO-220AB PACKAGE
RoHS: Compliant		0
  • 250:$4.9600
IRG4BC30FDPBF
DISTI # 942-IRG4BC30FDPBF		Infineon Technologies AGIGBT Transistors 600V Fast 1-8kHz
RoHS: Compliant		939
  • 1:$3.5700
  • 10:$3.0300
  • 100:$2.6300
  • 250:$2.5000
  • 500:$2.2400
  • 1000:$1.8900
  • 2000:$1.8000
IRG4BC30FDPBFInternational Rectifier 
RoHS: Not Compliant		130
  • 1000:$1.7800
  • 500:$1.8700
  • 100:$1.9500
  • 25:$2.0300
  • 1:$2.1900
IRG4BC30FDPBF
DISTI # 5411310		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 31A TO220AB, EA208
  • 500:£1.4100
  • 250:£1.5300
  • 100:£1.6200
  • 25:£1.8200
  • 1:£3.3500
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AGTransistor: IGBT,600V,31A,45W,TO220AB90
  • 50:$2.0900
  • 10:$2.3600
  • 3:$2.6600
  • 1:$2.9700
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF		Infineon Technologies AG600V 31A 100W TO220AB
RoHS: Compliant		530
  • 10:€1.6900
  • 50:€1.4900
  • 100:€1.3900
  • 200:€1.3400
IRG4BC30FDPBF
DISTI # IGBT1709		Infineon Technologies AGIGBT 600V17A 1,59VTO-220
RoHS: Compliant		Stock DE - 600Stock HK - 0Stock US - 0
  • 50:$2.0700
  • 150:$1.9500
  • 250:$1.9200
  • 450:$1.8800
  • 850:$1.7700
IRG4BC30FDPBFInternational Rectifier 
RoHS: Compliant		6150
    IRG4BC30FDPBF
    DISTI # 8650381    		Infineon Technologies AGIGBT, 600V, 31A, TO-220772
    • 500:£1.7400
    • 250:£1.9400
    • 100:£2.0500
    • 10:£2.3700
    • 1:£3.1300
    IRG4BC30FDPBF
    DISTI # 8650381    		Infineon Technologies AGIGBT, 600V, 31A, TO-220
    RoHS: Compliant    		773
    • 5000:$2.6700
    • 2000:$2.7700
    • 1000:$2.9100
    • 500:$3.4500
    • 250:$3.8500
    • 100:$4.0400
    • 10:$4.6700
    • 1:$5.4900
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    Availability
    Stock:
    939
    On Order:
    2922
    Enter Quantity:
    Current price of IRG4BC30FDPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.57
    $3.57
    10
    $3.03
    $30.30
    100
    $2.63
    $263.00
    250
    $2.50
    $625.00
    500
    $2.24
    $1 120.00
    1000
    $1.89
    $1 890.00
    2000
    $1.80
    $3 600.00
    5000
    $1.73
    $8 650.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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