IPP65R074C6

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

57.7 A

Rds On - Drain-Source Resistance:

67 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

138 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

480.8 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Series:

CoolMOS C6

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

Infineon Technologies

Fall Time:

4 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

56 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

IPP65R074C6XKSA1 IPP65R74C6XK SP000898650

Unit Weight:

0.063493 oz

Tags

IPP65R07, IPP65R0, IPP65, IPP6, IPP