IRFP90N20DPBF

Mfr. #:: IRFP90N20DPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 200V 94A 23mOhm 180nCAC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFP90N20DPBF Datasheet
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More Information:: IRFP90N20DPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 94 A

Rds On - Drain-Source Resistance:: 23 mOhms

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 180 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 580 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Transistor Type:: 1 N-Channel

Width:: 5.31 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 39 S

Fall Time:: 79 ns

Product Type:: MOSFET

Rise Time:: 160 ns

Factory Pack Quantity:: 400

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 43 ns

Typical Turn-On Delay Time:: 23 ns

Part # Aliases:: SP001552070

Unit Weight:: 1.340411 oz

Tags: IRFP9, IRFP, IRF

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFP90N20DPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V

***itex: Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC

***eco: Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W

***ure Electronics: Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ment14 APAC: MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***trelec: MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W

***ure Electronics: Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFP4321PBF N-channel MOSFET Transistor, 78 A, 150 V, 3-Pin TO-247AC

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 310 W

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ure Electronics: Single N-Channel 150 V 15.5 Ohm 110 nC HEXFET® Power Mosfet - TO-247AC

***ment14 APAC: MOSFET, N, 150V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:78A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:330A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***p One Stop: Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube

***ment14 APAC: MOSFET, 200V 130A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:520A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 30 / Fall Time ns = 74 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 64 / Turn-ON Delay Time ns = 41 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 520

***icroelectronics: N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™2; Power MOSFET

***ical: Trans MOSFET N-CH 200V 83A 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Power Field-Effect Transistor, 83A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-247AD

*** Electronic Components: MOSFET N-channel 200V, 83A STripFET Mosfet

***el Electronic: CAP CER 0.068UF 630V X7R RADIAL

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-247AC

***roFlash: Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***nell: MOSFET, N, 200V, 20A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:20A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:80A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.83°C/W; Transistors, No. of:1; Voltage, Vds Max:200V

***ure Electronics: Single N-Channel 200 V 0.055 Ohms Flange Mount Power Mosfet - TO-247AC

***ser: Single-Gate MOSFET Transistors N-Chan 200V 46 Amp

***ical: Trans MOSFET N-CH 200V 46A 3-Pin (3+Tab) TO-247AC

***(Formerly Allied Electronics): Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-247AC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

IRFP90N20DPBF More Information

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRFP90N20DPBF DISTI # V99:2348_13892986	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	153	1:$4.4933
IRFP90N20DPBF DISTI # IRFP90N20DPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 94A TO-247AC RoHS: Compliant Min Qty: 1 Container: Bag	1940In Stock	1000:$3.7410 500:$4.3594 100:$5.2871 10:$6.3580 1:$7.0700
IRFP90N20DPBF DISTI # 26198466	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	153	100:$3.1830 10:$3.7530 3:$4.4760
IRFP90N20DPBF DISTI # IRFP90N20DPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP90N20DPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 6301	1:$3.6900 10:$3.2900 25:$3.2900 50:$3.2900 100:$2.9900 500:$2.6900 1000:$2.6900
IRFP90N20DPBF DISTI # IRFP90N20DPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC (Alt: IRFP90N20DPBF) RoHS: Compliant Min Qty: 400	Asia - 0	400:$3.0443 800:$2.9192 1200:$2.8797 2000:$2.7675 4000:$2.7321 10000:$2.6637 20000:$2.5988
IRFP90N20DPBF DISTI # 63J6896	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 94A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:94A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes	458	1:$7.3300 10:$6.3100 25:$6.0500 50:$5.7900 100:$5.5300 250:$5.2800 500:$4.7800
IRFP90N20DPBF. DISTI # 26AC0531	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 94A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:94A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes	0	1:$7.4800 10:$6.4400 25:$6.1700 50:$5.7900 100:$5.5300 250:$5.2800 500:$4.7800
IRFP90N20DPBF DISTI # 70017459	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.023Ohm,ID 94A,TO-247AC,PD 580W,VGS +/-30V RoHS: Compliant	10	1:$6.3340 10:$5.5890 100:$4.8720 500:$4.2230 1000:$3.7260
IRFP90N20DPBF DISTI # 942-IRFP90N20DPBF	Infineon Technologies AG	MOSFET MOSFT 200V 94A 23mOhm 180nCAC RoHS: Compliant	1012	1:$5.7300 10:$4.8700 100:$4.2200 250:$4.0100
IRFP90N20DPBF	Infineon Technologies AG	Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET Power Mosfet - TO-247AC RoHS: Compliant	497Tube	5:$3.3100 50:$2.9300 250:$2.5200
IRFP90N20DPBF DISTI # 9133907	Infineon Technologies AG	MOSFET N-CHANNEL 200V 94A TO247AC, TU	450	25:£3.2700 125:£2.7830 250:£2.6360
IRFP90N20DPBF DISTI # 6391857P	Infineon Technologies AG	MOSFET N-CHANNEL 200V 94A TO247AC, TU	1599	13:£3.2000
IRFP90N20DPBF DISTI # 6391857	Infineon Technologies AG	MOSFET N-CHANNEL 200V 94A TO247AC, EA	180	1:£5.6300 13:£3.2000
IRFP90N20DPBF	Infineon Technologies AG	MOSFET Transistor, N-Channel, TO-247AC	80	29:$8.3805 9:$9.0600 1:$13.5900
IRFP90N20DPBF DISTI # IRFP90N20DPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,94A,580W,TO247AC	1905	1:$4.2900 3:$3.7300 10:$3.0300 100:$2.6500
IRFP90N20DPBF DISTI # TMOSP12238	Infineon Technologies AG	N-CH 200V 94A 23mOhm TO247 RoHS: Compliant	Stock DE - 400Stock US - 0	25:$3.6200 75:$3.4100 125:$3.2100 225:$2.8900 400:$2.7900
IRFP90N20DPBF	International Rectifier	RoHS: Compliant	Europe - 218
IRFP90N20DPBF DISTI # IRFP90N20DPBF	Infineon Technologies AG	N-Ch 200V 94A 580W 0,023R TO247AC RoHS: Compliant	780	5:€2.7600 25:€2.1600 100:€1.9600 200:€1.8900
IRFP90N20DPBF	Infineon Technologies AG		103
IRFP90N20DPBF DISTI # C1S327400173089	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	124	50:$2.5800 10:$3.3000 1:$4.9100
IRFP90N20DPBF DISTI # C1S322000570377	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	275	200:$3.4300 50:$3.7100 10:$4.9100 1:$6.0600
IRFP90N20DPBF DISTI # C1S322000492361	Infineon Technologies AG	Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	153	100:$3.1830 10:$3.7530 1:$4.4760
IRFP90N20DPBF	Infineon Technologies AG	RoHS(ship within 1day)	100	1:$6.8400 10:$5.8300 50:$5.0500 100:$4.8200 500:$4.6200 1000:$4.5300
IRFP90N20DPBF DISTI # 8658617	Infineon Technologies AG	MOSFET, N, 200V, 94A, TO-247AC RoHS: Compliant	458	1:$9.0800 10:$7.7100 100:$6.6800 250:$6.3500
IRFP90N20DPBF DISTI # XSFP00000011475	Infineon Technologies AG	RoHS: Compliant	334	50:$6.6200 334:$6.0200
IRFP90N20DPBF DISTI # 8658617	Infineon Technologies AG	MOSFET, N, 200V, 94A, TO-247AC RoHS: Compliant	0	1:£4.8900 10:£3.2600 100:£2.8400 250:£2.6900 500:£2.6400

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IRFP90N20DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes