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PSMN1R5-30BLEJ

PSMN1R5-30BLEJ
Mfr. #:
PSMN1R5-30BLEJ
Manufacturer:
Nexperia
Description:
MOSFET N-CH 30V 120A D2PAK
Lifecycle:
New from this manufacturer.
Datasheet:
PSMN1R5-30BLEJ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
PSMN1R5-30BLEJ more Information
Product Attribute
Attribute Value
Manufacturer
NXP Semiconductors
Product Category
FETs - Single
Series
-
Packaging
Digi-ReelR Alternate Packaging
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Package-Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technology
Si
Operating-Temperature
-55°C ~ 175°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
D2PAK
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
401W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
14934pF @ 15V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
120A (Tc)
Rds-On-Max-Id-Vgs
1.5 mOhm @ 25A, 10V
Vgs-th-Max-Id
2.15V @ 1mA
Gate-Charge-Qg-Vgs
228nC @ 10V
Pd-Power-Dissipation
401 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
99.2 ns
Rise-Time
156.1 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
120 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V
Rds-On-Drain-Source-Resistance
1.3 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
191.8 ns
Typical-Turn-On-Delay-Time
100.6 ns
Qg-Gate-Charge
228 nC
Channel-Mode
Enhancement
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
***ure Electronics
Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package
***p One Stop Japan
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 30V D2PAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Part # Mfg. Description Stock Price
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # V72:2272_06540853    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-1-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-6-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-2-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 800
      Container: Tape & Reel (TR)      		On Order
      • 1600:$1.4430
      • 800:$1.7110
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3854
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        Image Part # Description
        PSMN1R5-40ES,127

        Mfr.#: PSMN1R5-40ES,127

        OMO.#: OMO-PSMN1R5-40ES-127

        		 MOSFET N-Ch 40V 1.6 mOhms
        PSMN1R5-30YL,115

        Mfr.#: PSMN1R5-30YL,115

        OMO.#: OMO-PSMN1R5-30YL-115-NEXPERIA

        		 MOSFET N-CH 30V LFPAK
        PSMN1R5-25YL

        Mfr.#: PSMN1R5-25YL

        OMO.#: OMO-PSMN1R5-25YL-1190

        		 New and Original
        PSMN1R5-30BLE118

        Mfr.#: PSMN1R5-30BLE118

        OMO.#: OMO-PSMN1R5-30BLE118-1190

        		 Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        PSMN1R5-30YL115

        Mfr.#: PSMN1R5-30YL115

        OMO.#: OMO-PSMN1R5-30YL115-1190

        		 Now Nexperia PSMN1R5-30YL - Power Field-Effect Transistor, 100A I(D), 35V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
        PSMN1R5-30YLC,115

        Mfr.#: PSMN1R5-30YLC,115

        OMO.#: OMO-PSMN1R5-30YLC-115-NEXPERIA

        		 MOSFET N-CH 30V 100A LFPAK
        PSMN1R5-30YLC.115

        Mfr.#: PSMN1R5-30YLC.115

        OMO.#: OMO-PSMN1R5-30YLC-115-1190

        		 Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115)
        PSMN1R5-30YLC115

        Mfr.#: PSMN1R5-30YLC115

        OMO.#: OMO-PSMN1R5-30YLC115-1190

        		 - Bulk (Alt: PSMN1R5-30YLC115)
        PSMN1R5-25YL,115

        Mfr.#: PSMN1R5-25YL,115

        OMO.#: OMO-PSMN1R5-25YL-115-NEXPERIA

        		 IGBT Transistors MOSFET N-CH TRENCHMOS Logic level FET
        PSMN1R5-40PS,127

        Mfr.#: PSMN1R5-40PS,127

        OMO.#: OMO-PSMN1R5-40PS-127-NEXPERIA

        		 MOSFET N-CH 40V 120A TO220AB
        Availability
        Stock:
        Available
        On Order:
        5500
        Enter Quantity:
        Current price of PSMN1R5-30BLEJ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.86
        $1.86
        10
        $1.77
        $17.70
        100
        $1.68
        $167.64
        500
        $1.58
        $791.65
        1000
        $1.49
        $1 490.20
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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