FDS2670

FDS2670
Mfr. #:
FDS2670
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SO-8 N-CH 200V
Lifecycle:
New from this manufacturer.
Datasheet:
FDS2670 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
130 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Series:
FDS2670
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
3.9 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
15 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
FDS2670_NL
Unit Weight:
0.004586 oz
Tags
FDS2670, FDS267, FDS26, FDS2, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***Semiconductor
N-Channel PowerTrench® MOSFET,200V, 3.0A, 130mΩ
***p One Stop Global
Trans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R
***o-Tech
MOSFET N-Channel 200V 3A SOIC8
*** Source Electronics
MOSFET N-CH 200V 3A 8-SO
***ser
MOSFETs SO-8 N-CH 200V
***et
SO8, SINGLE, 200V/20V
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 200V 3A, SOIC-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:3A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Part # Mfg. Description Stock Price
FDS2670
DISTI # V72:2272_06300811
ON SemiconductorSO8, SINGLE, 200V/20V3659
  • 3000:$0.7804
  • 1000:$0.8199
  • 500:$0.8594
  • 250:$0.9959
  • 100:$1.0368
  • 25:$1.1640
  • 10:$1.2932
  • 1:$1.6713
FDS2670
DISTI # V36:1790_06300811
ON SemiconductorSO8, SINGLE, 200V/20V0
  • 2500000:$0.6837
  • 1250000:$0.6839
  • 250000:$0.7007
  • 25000:$0.7289
  • 2500:$0.7336
FDS2670
DISTI # FDS2670CT-ND
ON SemiconductorMOSFET N-CH 200V 3A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2206In Stock
  • 1000:$0.8115
  • 500:$0.9794
  • 100:$1.1921
  • 10:$1.4830
  • 1:$1.6500
FDS2670
DISTI # FDS2670DKR-ND
ON SemiconductorMOSFET N-CH 200V 3A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2206In Stock
  • 1000:$0.8115
  • 500:$0.9794
  • 100:$1.1921
  • 10:$1.4830
  • 1:$1.6500
FDS2670
DISTI # FDS2670TR-ND
ON SemiconductorMOSFET N-CH 200V 3A 8-SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 12500:$0.6883
  • 5000:$0.7064
  • 2500:$0.7336
FDS2670
DISTI # 25743436
ON SemiconductorSO8, SINGLE, 200V/20V3659
  • 9:$1.6713
FDS2670
DISTI # FDS2670
ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R (Alt: FDS2670)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 125000:$0.7377
  • 62500:$0.7500
  • 25000:$0.7759
  • 12500:$0.8036
  • 7500:$0.8333
  • 5000:$0.8654
  • 2500:$0.9000
FDS2670
DISTI # FDS2670
ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS2670)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.5719
  • 15000:$0.5859
  • 10000:$0.5939
  • 5000:$0.6009
  • 2500:$0.6049
FDS2670
DISTI # FDS2670
ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R - Bulk (Alt: FDS2670)
RoHS: Compliant
Min Qty: 385
Container: Bulk
Americas - 0
  • 3850:$0.8019
  • 1925:$0.8219
  • 1155:$0.8329
  • 770:$0.8439
  • 385:$0.8489
FDS2670
DISTI # FDS2670
ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R (Alt: FDS2670)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.5589
  • 15000:€0.6019
  • 10000:€0.6519
  • 5000:€0.7109
  • 2500:€0.8689
FDS2670
DISTI # 34C0155
ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 34C0155)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 500:$1.0600
  • 250:$1.1300
  • 100:$1.2000
  • 50:$1.3000
  • 25:$1.3900
  • 10:$1.4900
  • 1:$1.7500
FDS2670
DISTI # 34C0155
ON SemiconductorN CHANNEL MOSFET, 200V, 3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:8Pins RoHS Compliant: Yes60
  • 1000:$0.8860
  • 500:$1.0600
  • 250:$1.1300
  • 100:$1.2000
  • 50:$1.3000
  • 25:$1.3900
  • 10:$1.4900
  • 1:$1.7500
FDS2670
DISTI # 512-FDS2670
ON SemiconductorMOSFET SO-8 N-CH 200V
RoHS: Compliant
3146
  • 1:$1.5300
  • 10:$1.3000
  • 100:$1.0400
  • 500:$0.9060
  • 1000:$0.7510
  • 2500:$0.6990
  • 5000:$0.6730
  • 10000:$0.6470
FDS2670ON SemiconductorSmall Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
2500
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
FDS2670Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
43085
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
FDS2670Fairchild Semiconductor Corporation 2500
    FDS2670Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    2500
      FDS2670
      DISTI # 2825187
      ON SemiconductorMOSFET, N-CH, 200V, 3A, SOIC-8
      RoHS: Compliant
      1655
      • 5000:$0.9780
      • 1000:$1.0100
      • 500:$1.1000
      • 250:$1.3300
      • 100:$1.6200
      • 25:$2.3700
      • 5:$2.7600
      FDS2670
      DISTI # 2825187
      ON SemiconductorMOSFET, N-CH, 200V, 3A, SOIC-81665
      • 500:£0.6980
      • 250:£0.7500
      • 100:£0.8010
      • 10:£1.0600
      • 1:£1.3400
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      Availability
      Stock:
      Available
      On Order:
      1986
      Enter Quantity:
      Current price of FDS2670 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.53
      $1.53
      10
      $1.30
      $13.00
      100
      $1.04
      $104.00
      500
      $0.91
      $453.00
      1000
      $0.75
      $751.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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