Si4459BDY-T1-GE3

Si4459BDY-T1-GE3
Mfr. #:
Si4459BDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 16V Vgs SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
Si4459BDY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
Si4459BDY-T1-GE3 DatasheetSi4459BDY-T1-GE3 Datasheet (P4-P6)Si4459BDY-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
Si4459BDY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
27.8 A
Rds On - Drain-Source Resistance:
4.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
56 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
5.6 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
81 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
39 ns
Typical Turn-On Delay Time:
15 ns
Tags
Si4459, SI445, SI44, SI4
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SI4459BDY-T1-GE3
DISTI # V72:2272_21688054
Vishay IntertechnologiesSI4459BDY-T1-GE34861
  • 75000:$0.4521
  • 30000:$0.4577
  • 15000:$0.4632
  • 6000:$0.4688
  • 3000:$0.4743
  • 1000:$0.4895
  • 500:$0.6054
  • 250:$0.6627
  • 100:$0.7180
  • 50:$0.8568
  • 25:$0.9520
  • 10:$1.0681
  • 1:$1.2840
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CHAN 30V SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2344In Stock
  • 1000:$0.5516
  • 500:$0.6986
  • 100:$0.8457
  • 10:$1.0850
  • 1:$1.2100
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CHAN 30V SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2344In Stock
  • 1000:$0.5516
  • 500:$0.6986
  • 100:$0.8457
  • 10:$1.0850
  • 1:$1.2100
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CHAN 30V SO-8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 12500:$0.4570
  • 5000:$0.4748
  • 2500:$0.4998
SI4459BDY-T1-GE3
DISTI # 29568925
Vishay IntertechnologiesSI4459BDY-T1-GE34861
  • 15000:$0.4632
  • 6000:$0.4688
  • 3000:$0.4743
  • 1000:$0.4895
  • 500:$0.6054
  • 250:$0.6627
  • 100:$0.7180
  • 50:$0.8568
  • 25:$0.9520
  • 15:$1.0681
SI4459BDY-T1-GE3
DISTI # SI4459BDY-T1-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SI4459BDY-T1-GE3)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.4349
  • 25000:$0.4469
  • 15000:$0.4599
  • 10000:$0.4799
  • 5000:$0.4939
SI4459BDY-T1-GE3
DISTI # 56AC6588
Vishay IntertechnologiesMOSFET, P-CH, -30V, -27.8A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-27.8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,Power RoHS Compliant: Yes4362
  • 500:$0.6530
  • 250:$0.7060
  • 100:$0.7600
  • 50:$0.8360
  • 25:$0.9130
  • 10:$0.9900
  • 1:$1.2000
SI4459BDY-T1-GE3
DISTI # 59AC7481
Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4320
  • 6000:$0.4420
  • 4000:$0.4590
  • 2000:$0.5100
  • 1000:$0.5610
  • 1:$0.5850
Si4459BDY-T1-GE3
DISTI # 78-SI4459BDY-T1-GE3
Vishay IntertechnologiesMOSFET -30V Vds 16V Vgs SO-8
RoHS: Compliant
5077
  • 1:$1.1800
  • 10:$0.9790
  • 100:$0.7510
  • 500:$0.6460
  • 1000:$0.5090
  • 2500:$0.4750
  • 5000:$0.4520
  • 10000:$0.4350
SI4459BDY-T1-GE3
DISTI # 2857064
Vishay IntertechnologiesMOSFET, P-CH, -30V, -27.8A, SOIC
RoHS: Compliant
4362
  • 1000:$0.8320
  • 500:$1.0600
  • 100:$1.2800
  • 5:$1.6400
SI4459BDY-T1-GE3
DISTI # 2857064
Vishay IntertechnologiesMOSFET, P-CH, -30V, -27.8A, SOIC4441
  • 500:£0.5040
  • 250:£0.5450
  • 100:£0.5850
  • 10:£0.8200
  • 1:£1.0600
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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of Si4459BDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.18
$1.18
10
$0.98
$9.79
100
$0.75
$75.10
500
$0.65
$323.00
1000
$0.51
$509.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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