Si4459BDY-T1-GE3 Datasheet Si4459BDY-T1-GE3 | P1-P3

Si4459BDY

www.vishay.com

Vishay Siliconix

S17-1507-Rev. A, 02-Oct-17

1

Document Number: 76759

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen IV p-channel power MOSFET

• Enables higher power density

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Battery management in mobile devices

• Adapter and charger switch

• Battery switch

•Load switch

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257

). The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 85 °C/W

g. T

C

= 25 °C

PRODUCT SUMMARY

V

DS

(V) -30

R

DS(on)

max. () at V

GS

= 10 V 0.0049

R

DS(on)

max. () at V

GS

= 4.5 V 0.0082

Q

g

typ. (nC) 27

I

D

(A) 27.8

a, g

Configuration Single

Top View

SO-8 Single

1

S

2

S

3

S

1

2

S

3

S

4

G

D

7

D

6

D

5

D

8

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package SO-8

Lead (Pb)-free and halogen-free Si4459BDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

-30

V

Gate-source voltage V

GS

+16 / -20

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

-27.8

A

T

C

= 70 °C -22.1

T

A

= 25 °C -20.5

b, c

T

A

= 70 °C -16.4

b, c

Pulsed drain current (t = 100 μs) I

DM

-150

Continuous source-drain diode current

T

C

= 25 °C

I

S

-5

T

A

= 25 °C -2.8

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

-25

Single pulse avalanche energy E

AS

31.2 mJ

Maximum power dissipation

T

C

= 25 °C

I

P

5.6

W

T

C

= 70 °C 3.6

T

A

= 25 °C 3.1

b, c

T

A

= 70 °C 2

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

c

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b

t  10 s R

thJA

34 40

°C/W

Maximum junction-to-case (drain) Steady state R

thJF

18 22

Si4459BDY

www.vishay.com

Vishay Siliconix

S17-1507-Rev. A, 02-Oct-17

2

Document Number: 76759

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -30 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= -10 mA - -17 -

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

I

D

= -250 μA - 5.5 -

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA -1 - -2.2 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= +16 / -20 V - - 100 nA

Zero gate voltage drain current I

DSS

V

DS

= -30 V, V

GS

= 0 V - - -1

μA

V

DS

= -30 V, V

GS

= 0 V, T

J

= 70 °C - - -15

On-state drain current

a

I

D(on)

V

DS

 -10 V, V

GS

= -10 V -40 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= -10 V, I

D

= -15 A - 0.0041 0.0049



V

GS

= -4.5 V, I

D

= -10 A - 0.0063 0.0082

Forward transconductance

a

g

fs

V

DS

= -15 V, I

D

= -15 A - 81 - S

Dynamic

b

Input capacitance C

iss

V

DS

= -15 V, V

GS

= 0 V, f = 1 MHz

- 3490 -

pFOutput capacitance C

oss

- 1420 -

Reverse transfer capacitance C

rss

-70-

Total gate charge Q

g

V

DS

= -15 V, V

GS

= -10 V, I

D

= -10 A - 56 84

nC

V

DS

= -15 V, V

GS

= -4.5 V, I

D

=-10 A

-2741

Gate-source charge Q

gs

-9.4-

Gate-drain charge Q

gd

-8.2-

Gate resistance R

g

f = 1 MHz 1.5 3.5 6 

Turn-on delay time t

d(on)

V

DD

= -15 V, R

L

= 1.5 , I

D

 -10 A,

V

GEN

= -10 V, R

g

= 1 

-1530

ns

Rise time t

r

-612

Turn-off delay time t

d(off)

-3978

Fall time t

f

-1020

Turn-on delay time t

d(on)

V

DD

= -15 V, R

L

= 1.5 , I

D

 -10 A,

V

GEN

= -4.5 V, R

g

= 1 

-3468

Rise time t

r

- 86 172

Turn-off delay time t

d(off)

-3162

Fall time t

f

-2244

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - -5

A

Pulse diode forward current I

SM

- - -150

Body diode voltage V

SD

I

S

= -5 A, V

GS

= 0 V - -0.73 -1.1 V

Body diode reverse recovery time t

rr

I

F

= -10 A, di/dt = 100 A/μs, T

J

= 25 °C

-4488ns

Body diode reverse recovery charge Q

rr

-4182nC

Reverse recovery fall time t

a

-19-

ns

Reverse recovery rise time t

b

-25-

Si4459BDY

www.vishay.com

Vishay Siliconix

S17-1507-Rev. A, 02-Oct-17

3

Document Number: 76759

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

30

60

90

120

150

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 5 V

V

GS

= 4 V

V

GS

= 2 V

V

GS

= 3 V

10

100

1000

10000

0

0.003

0.006

0.009

0.012

0.015

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 1224364860

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 10 V, 15 V, 20 V

I

D

= 10 A

10

100

1000

10000

0

30

60

90

120

150

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

900

1800

2700

3600

4500

0 6 12 18 24 30

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.6

0.8

1.0

1.2

1.4

1.6

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 15 A

V

GS

= 10 V

V

GS

= 4.5 V

Si4459BDY-T1-GE3

Si4459BDY-T1-GE3

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