SI2304BDS-T1-GE3

Mfr. #:: SI2304BDS-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V 3.2A 1.08W 70mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SI2304BDS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2304BDS-T1-GE3 Datasheet SI2304BDS-T1-GE3 Datasheet (P4-P6)SI2304BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:: SI2304BDS-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 2.6 A

Rds On - Drain-Source Resistance:: 70 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 2.6 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 0.75 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.45 mm

Length:: 2.9 mm

Series:: SI2

Transistor Type:: 1 N-Channel

Width:: 1.6 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 6 S

Fall Time:: 15 ns

Product Type:: MOSFET

Rise Time:: 12.5 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 19 ns

Typical Turn-On Delay Time:: 7.5 ns

Part # Aliases:: SI2304BDS-GE3

Unit Weight:: 0.000282 oz

Tags: SI2304BDS-T1, SI2304BDS-T, SI2304B, SI2304, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2304BDS-T1-GE3 Description

***ure Electronics: Single N-Channel 30 V 0.07 Ohm 0.75 W Surface Mount Power Mosfet - SOT-23-3

***et: Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R

***ment14 APAC: N CHANNEL MOSFET, 30V, 3.2A, TO-236; Tra; N CHANNEL MOSFET, 30V, 3.2A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3

SI2304BDS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2304BDS-T1-GE3 DISTI # V72:2272_07432760	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2710	1000:$0.1771 500:$0.2022 250:$0.2274 100:$0.2344 25:$0.3154 10:$0.3166 1:$0.3799
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	105553In Stock	1000:$0.1246 500:$0.1661 100:$0.2423 10:$0.3530 1:$0.4500
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	105553In Stock	1000:$0.1246 500:$0.1661 100:$0.2423 10:$0.3530 1:$0.4500
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 2.6A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	105000In Stock	3000:$0.1109
SI2304BDS-T1-GE3 DISTI # 27168410	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2710	1000:$0.1771 500:$0.2022 250:$0.2274 100:$0.2344 33:$0.3154
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2304BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2029 6000:$0.1969 12000:$0.1889 18000:$0.1839 30000:$0.1789
SI2304BDS-T1-GE3 DISTI # SI2304BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R (Alt: SI2304BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2749 6000:€0.1869 12000:€0.1609 18000:€0.1489 30000:€0.1379
SI2304BDS-T1-GE3 DISTI # 16P3704	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3704) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8040 25:$0.6070 50:$0.5290 100:$0.4510 250:$0.4120 500:$0.3710 1000:$0.2870
SI2304BDS-T1-GE3 DISTI # 16P3704	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 3.2A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):105mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	3560	1:$0.8040 25:$0.6070 50:$0.5290 100:$0.4510 250:$0.4120 500:$0.3710 1000:$0.2870
SI2304BDS-T1-GE3. DISTI # 28AC2124	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.2030 6000:$0.1970 12000:$0.1890 18000:$0.1840 30000:$0.1790
SI2304BDS-T1-GE3 DISTI # 781-SI2304BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 3.2A 1.08W 70mohm @ 10V RoHS: Compliant	11724	1:$0.6700 10:$0.5060 100:$0.3760 500:$0.3090 1000:$0.2390 3000:$0.2170 6000:$0.2030 9000:$0.1900
SI2304BDS-T1-GE3 DISTI # C1S803603512729	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	6000	3000:$0.0900
SI2304BDS-T1-GE3 DISTI # C1S803601360168	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2710	250:$0.2341 100:$0.2345 25:$0.3157 10:$0.3168
SI2304BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 3.2A 1.08W 70mohm @ 10V RoHS: Compliant	Americas -
SI2304BDS-T1-GE3 DISTI # XSFP00000077602	Vishay Siliconix	RoHS: Compliant	4038	3000:$0.1936 4038:$0.1760

Related products

Image	Part #	Description
	Mfr.#: S2-LPQTR OMO.#: OMO-S2-LPQTR	RF Transceiver Ultra-low power, high performance, sub-1GHz transceiver
	Mfr.#: ADUM162N1BRZ OMO.#: OMO-ADUM162N1BRZ	Digital Isolators IC Robust 6 CH Digital ISO, 4/2
	Mfr.#: ADUM163N1BRZ OMO.#: OMO-ADUM163N1BRZ	Digital Isolators IC, Robust 6 ch digital ISO 3/3
	Mfr.#: PRTR5V0U2AX,215 OMO.#: OMO-PRTR5V0U2AX-215	TVS Diodes / ESD Suppressors 5.5V DUAL R-R ESD ULTRA LOW CAP
	Mfr.#: 1N4148WX-TP OMO.#: OMO-1N4148WX-TP	Diodes - General Purpose, Power, Switching 100Vrm 71Vr 150mA 4.0A 100mW 1.5pF
	Mfr.#: STM32L496QGI6P OMO.#: OMO-STM32L496QGI6P	ARM Microcontrollers - MCU Ultra-low-power with FPU ARM Cortex-M4 MCU 80 MHz with 1 Mbyte Flash, USB OTG, LCD, DFSDM
	Mfr.#: ADP5301ACBZ-3-R7 OMO.#: OMO-ADP5301ACBZ-3-R7	Switching Voltage Regulators 50mA/500mA ULP Buck VOUT1
	Mfr.#: 74479887310A OMO.#: OMO-74479887310A	Fixed Inductors WE-PMI 1008 10uH 850mA 300mOhms
	Mfr.#: ZX62D-AB-5P8(30) OMO.#: OMO-ZX62D-AB-5P8-30--HIROSE	New and Original
	Mfr.#: S2-LPQTR OMO.#: OMO-S2-LPQTR-STMICROELECTRONICS	Transceiver 1TX 1RX 500Kbps 24-Pin QFN EP T/R

Availability

Stock:: Available
On Order:: 1993
Enter Quantity:

Current price of SI2304BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.66~~; ~~$0.66~~

10: ~~$0.51~~; ~~$5.06~~

100: ~~$0.38~~; ~~$37.60~~

500: ~~$0.31~~; ~~$154.50~~

1000: ~~$0.24~~; ~~$239.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI2304BDS-T1 4
SI2304BDS-T 5
SI2304B 6
SI2304 26
SI230 331
SI23 561
SI2 1125

Newest Products

Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
Compare SI2304BDS-T1-GE3

SI2304BDST1E3 vs SI2304BDST1E3CUTTAPE vs SI2304BDST1GE3
50 A VRPower® Solution (DrMOS)

Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products

SI2304BDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes