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IPB60R099C7ATMA1

IPB60R099C7ATMA1
Mfr. #:
IPB60R099C7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPB60R099C7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
22 A
Rds On - Drain-Source Resistance:
99 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
110 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Series:
CoolMOS C7
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
4.5 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
54 ns
Typical Turn-On Delay Time:
11.8 ns
Part # Aliases:
IPB60R099C7 SP001297998
Unit Weight:
0.139332 oz
Tags
IPB60R099C, IPB60R099, IPB60R09, IPB60R0, IPB60R, IPB60, IPB6, IPB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N-CH, 650V, 150DEG C, 110W ROHS COMPLIANT: YES
***ineon SCT
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO263-3, RoHS
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Part # Mfg. Description Stock Price
IPB60R099C7ATMA1
DISTI # 32680826		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK1000
  • 1000:$2.4693
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		890In Stock
  • 500:$3.5396
  • 100:$4.1580
  • 10:$5.0750
  • 1:$5.6500
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		890In Stock
  • 500:$3.5396
  • 100:$4.1580
  • 10:$5.0750
  • 1:$5.6500
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 22A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$2.7533
  • 1000:$2.8982
IPB60R099C7ATMA1
DISTI # V36:1790_13989137		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4990
  • 10000:$2.8340
  • 1000:$2.8900
IPB60R099C7ATMA1
DISTI # IPB60R099C7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R099C7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 6000:$2.3900
  • 10000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
IPB60R099C7ATMA1
DISTI # SP001297998		Infineon Technologies AGMOSFET HIGH POWER_NEW (Alt: SP001297998)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.4900
  • 2000:€2.5900
  • 1000:€2.6900
IPB60R099C7ATMA1
DISTI # 726-IPB60R099C7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		983
  • 1:$5.2100
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
  • 1000:$2.7600
  • 2000:$2.6200
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Mfr.#: IPB60R120P7ATMA1

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 MOSFET N-CH TO263-3
Availability
Stock:
963
On Order:
2946
Enter Quantity:
Current price of IPB60R099C7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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