| PartNumber | IPB60R099C6 | IPB60R099C7ATMA1 | IPB60R099C6ATMA1 |
| Description | MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 37.9 A | 22 A | - |
| Rds On Drain Source Resistance | 99 mOhms | 99 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 119 nC | 42 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 278 W | 110 W | - |
| Configuration | Single | Single | Single |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | CoolMOS C6 | CoolMOS C7 | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 4.5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 8 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 75 ns | 54 ns | - |
| Typical Turn On Delay Time | 15 ns | 11.8 ns | - |
| Part # Aliases | IPB60R099C6ATMA1 IPB6R99C6XT SP000687468 | IPB60R099C7 SP001297998 | IPB60R099C6 IPB6R99C6XT SP000687468 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Channel Mode | - | Enhancement | - |