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FDC6308P

FDC6308P
Mfr. #:
FDC6308P
Manufacturer:
Rochester Electronics, LLC
Description:
MOSFET DISC BY MFG 2/02
Lifecycle:
New from this manufacturer.
Datasheet:
FDC6308P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FDC630, FDC63, FDC6, FDC
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Dual P-channel 2.5V Specified PowerTrench MOSFET
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***et Europe
Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin TSOT-23 T/R
***ure Electronics
Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
***r Electronics
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
***emi
P-Channel PowerTrench® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ
***ark
Transistor,mosfet,p-Channel,20V V(Br)Dss,2.2A I(D),so Rohs Compliant: Yes
***el Electronic
Chip Resistor - Surface Mount 120Ohm 0603 (1608 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 120 OHM 5% 1/4W 0603
***rchild Semiconductor
The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
*** Source Electronics
MOSFET N/P-CH 20V 2.7A 6-TSOP / Trans MOSFET N/P-CH Si 20V 2.7A/2.2A 6-Pin TSOP T/R
***ernational Rectifier
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
***ment14 APAC
MOSFET, DUAL, NP, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2.2A; Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; On State Resistance Channel 1:90mohm; On State Resistance P Channel 2:135mohm; Package / Case:TSOP; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:9A; Pulse Current Idm N Channel:11A; Pulse Current Idm P Channel:9A; Termination Type:SMD; Voltage Vds N Channel 1:20V; Voltage Vds P Channel 1:20V; Voltage Vds Typ:20V; Voltage Vgs Max:1.25V; Voltage Vgs Rds on Measurement:4.5V
***ure Electronics
ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
***et
Trans MOSFET N-CH 20V 2.2A 3-Pin SOT-23 T/R
***ark
N CHANNEL MOSFET, 20V, 2.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current, Id:2.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.2A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Pd:806mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:8A; SMD Marking:7N2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV
***ure Electronics
Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-
***ure Electronics
DMP2104V Series P-Channel 20 V 150 mOhm MosFet Surface Mount - SOT-563-6
***ical
Trans MOSFET P-CH 20V 1.9A Automotive 6-Pin SOT-563 T/R
***ark
Mosfet, P Channel, -20V, -860Ma, Sot-563; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:860Ma; On Resistance Rds(On):0.15Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5Vrohs Compliant: Yes
***nell
MOSFET P-CHANNEL SOT-563; Transistor Polarity: P Channel; Continuous Drain Current Id: -950mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 170mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -860mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: -4.5V
Part # Mfg. Description Stock Price
FDC6308P
DISTI # 512-FDC6308P		ON SemiconductorMOSFET DISC BY MFG 2/02
RoHS: Not compliant		0
    FDC6308PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		42000
    • 1000:$0.5300
    • 500:$0.5500
    • 100:$0.5800
    • 25:$0.6000
    • 1:$0.6500
    FDC6308PFairchild Semiconductor CorporationMOSFET Transistor, Matched Pair, P-Channel, TSOP2681
    • 1363:$0.5170
    • 305:$0.5875
    • 1:$1.8800
    FDC6308PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant    		1970
      Image Part # Description
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      FDC6323L , LP2980AIM5-2.

      Mfr.#: FDC6323L , LP2980AIM5-2.

      OMO.#: OMO-FDC6323L-LP2980AIM5-2--1190

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      FDC6324L , LP2980AIM5-2.

      Mfr.#: FDC6324L , LP2980AIM5-2.

      OMO.#: OMO-FDC6324L-LP2980AIM5-2--1190

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      FDC6324L/ 324

      Mfr.#: FDC6324L/ 324

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      FDC6326L , LM4040DEX3-4.

      Mfr.#: FDC6326L , LM4040DEX3-4.

      OMO.#: OMO-FDC6326L-LM4040DEX3-4--1190

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      FDC6327C , 1N486B T50A

      Mfr.#: FDC6327C , 1N486B T50A

      OMO.#: OMO-FDC6327C-1N486B-T50A-1190

      		 New and Original
      FDC6331L.

      Mfr.#: FDC6331L.

      OMO.#: OMO-FDC6331L--1190

      		 INTEGRATED LOAD SWITCH, 8V, SSOT-6, FULL REEL
      FDC654P NL

      Mfr.#: FDC654P NL

      OMO.#: OMO-FDC654P-NL-1190

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      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of FDC6308P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
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      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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